Succinimide

Succinimide

SCHEMBL218546

CCCS(=O)(=O)O.O=C1CCC(=O)N1

nearest known ligand 0.46

Full drug profile on Sugi Atlas →

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CRBN Q96SW2 3/20 0.46
MEN1 O00255 2/20 0.41
KMT2A Q03164 2/20 0.41
TSHR P16473 1/20 0.41
GAA P10253 1/20 0.37
LMNA P02545 3/20 0.34
CYP2C19 P33261 2/20 0.34
KDM4E B2RXH2 1/20 0.34
DDB1 Q16531 1/20 0.34
ALDH1A1 P00352 1/20 0.32
PTGS1 P23219 1/20 0.31
PDE4A P27815 1/20 0.31
SLC6A6 P31641 1/20 0.31
BLM P54132 1/20 0.31
PKM P14618 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Succinimide SCHEMBL217582 0.87 CRBN (0.55) CRBNMEN1KMT2ATSHRLMNA
Succinimide SCHEMBL219483 0.86 CRBN (0.41) CRBNMEN1KMT2ATSHRGAA
Succinimide SCHEMBL218314 0.85 EPHX2 (0.43) CRBNLMNAKDM4E
Succinimide SCHEMBL217885 0.79 CRBN (0.46) CRBNLMNACYP2C19PTGS1PDE4A
2-Pyrrolidone SCHEMBL8841273 0.77 OR51E2 (0.54) CRBNMEN1KMT2ATSHRGAA
Succinimide SCHEMBL216817 0.77 CRBN (0.61) CRBNLMNACYP2C19KDM4EDDB1
SCHEMBL10587241 0.77 MEN1 (0.34) MEN1KMT2ATSHRGAALMNA
Succinimide SCHEMBL22714063 0.77 CRBN (0.69) CRBNTSHRLMNACYP2C19KDM4E
Succinimide SCHEMBL30302994 0.77 CRBN (0.69) CRBNDDB1PKM
Succinimide SCHEMBL27863987 0.77 CRBN (0.69) CRBNDDB1PKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108693705-A Resist lower layer membrane material, pattern forming method and resist lower membrane forming method 信越化学工业株式会社 2018-10-23 CN disclosed
CN-108693713-A Resist lower layer membrane material, pattern forming method and resist lower membrane forming method 信越化学工业株式会社 2018-10-23 CN disclosed
EP-1788436-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2013-01-09 EP disclosed
EP-1813985-B1 Antireflection film composition, substrate, and pattering process SHINETSU CHEMICAL CO (JP) 2012-10-31 EP disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8088554-B2 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD (JP) 2012-01-03 US disclosed
US-7868407-B2 Substrate comprising a lower silicone resin film and an upper silicone resin film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-11 US disclosed
US-7745104-B2 Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-29 US disclosed
US-20100151382-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
US-7687228-B2 Antireflection film composition and patterning process using the same SHIN ETSU CHEMICAL CO., LTD. (JP) 2010-03-30 US disclosed
US-7214743-B2 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-08 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
US-7169541-B2 Compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050014092-A1 Novel compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-20 US disclosed
US-20040259037-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-23 US disclosed
US-20040241577-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed