Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CRBN | Q96SW2 | 1/20 | 0.41 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.41 |
| ▸ | PRKCA | P17252 | 1/20 | 0.38 |
| ▸ | FAAH | O00519 | 2/20 | 0.36 |
| ▸ | S1PR2 | O95136 | 1/20 | 0.35 |
| ▸ | S1PR1 | P21453 | 1/20 | 0.35 |
| ▸ | S1PR3 | Q99500 | 1/20 | 0.35 |
| ▸ | APP | P05067 | 1/20 | 0.34 |
| ▸ | MEN1 | O00255 | 1/20 | 0.34 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.34 |
| ▸ | GAA | P10253 | 1/20 | 0.34 |
| ▸ | CYP19A1 | P11511 | 3/20 | 0.33 |
| ▸ | ALOX5 | P09917 | 2/20 | 0.33 |
| ▸ | CA2 | P00918 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Succinimide SCHEMBL218314 | 0.98 | EPHX2 (0.43) | CRBNEPHX2PRKCAFAAHS1PR2 | |
| Succinimide SCHEMBL218546 | 0.86 | CRBN (0.46) | CRBNMEN1TSHRKMT2AGAA | |
| Succinimide SCHEMBL217582 | 0.82 | CRBN (0.55) | CRBNMEN1TSHRKMT2ACYP19A1 | |
| Succinimide SCHEMBL4639601 | 0.82 | CRBN (0.61) | CRBNTSHRKMT2ACYP19A1ALOX5 | |
| Succinimide SCHEMBL7039031 | 0.82 | CRBN (0.61) | CRBNCYP19A1ALOX5 | |
| SCHEMBL11336 | 0.79 | — | — | |
| SCHEMBL496699 | 0.77 | FAAH (0.56) | EPHX2FAAHAPPTSHRCA2 | |
| SCHEMBL7985111 | 0.77 | EPHX2 (0.52) | EPHX2FAAHS1PR2S1PR1S1PR3 | |
| SCHEMBL151083 | 0.77 | FAAH (0.56) | EPHX2FAAHAPPTSHRCA2 | |
| Ammonia Solution, Strong SCHEMBL2547477 | 0.77 | EPHX2 (0.52) | EPHX2FAAHS1PR2S1PR1S1PR3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| EP-1813985-B1 | Antireflection film composition, substrate, and pattering process | SHINETSU CHEMICAL CO (JP) | 2012-10-31 | — | — | EP | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7868407-B2 | Substrate comprising a lower silicone resin film and an upper silicone resin film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-11 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7687228-B2 | Antireflection film composition and patterning process using the same | SHIN ETSU CHEMICAL CO., LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| US-7655378-B2 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-02 | — | — | US | disclosed |
| US-7642043-B2 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-7214743-B2 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7169541-B2 | Compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-30 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050079446-A1 | Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050014092-A1 | Novel compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| US-20040259037-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |