Succinimide

Succinimide

SCHEMBL216817

CS(=O)(=O)O.O=C1CCC(=O)N1

nearest known ligand 0.61

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol

The experimentally established mechanism targets of Succinimide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CRBN Q96SW2 6/20 0.61
PKM P14618 6/20 0.33
NPC1 O15118 1/20 0.33
MAPK13 O15264 1/20 0.33
MAPK12 P53778 1/20 0.33
MAPK11 Q15759 1/20 0.33
MAPK14 Q16539 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
DDB1 Q16531 1/20 0.33
LMNA P02545 2/20 0.32
KDM4E B2RXH2 1/20 0.32
CYP2C19 P33261 1/20 0.32
TOP2A P11388 1/20 0.32
TOP2B Q02880 1/20 0.32
ALDH1A1 P00352 1/20 0.32
MAPT P10636 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
CA2 P00918 1/20 0.32
ALOX15 P16050 1/20 0.31
HTT P42858 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL217901 0.90 CRBN (0.65) CRBNPKMLMNAKDM4ECYP2C19
Succinimide SCHEMBL27863987 0.88 CRBN (0.69) CRBNPKMNPC1MAPK13MAPK12
Succinimide SCHEMBL30302994 0.88 CRBN (0.69) CRBNPKMNPC1MAPK13MAPK12
Succinimide SCHEMBL8613393 0.86 CRBN (0.65) CRBNPKMNPC1MAPK13MAPK12
Succinimide SCHEMBL217582 0.84 CRBN (0.55) CRBNPKMNPC1MAPK13MAPK12
Succinimide SCHEMBL219855 0.82 CRBN (0.52) CRBNNPC1MAPK13MAPK12MAPK11
Succinimide SCHEMBL8613396 0.81 CRBN (0.58) CRBNPKMNPC1MAPK13MAPK12
Succinimide SCHEMBL28013183 0.79 CRBN (0.73) CRBNNPC1MAPK13MAPK12MAPK11
Succinimide SCHEMBL774 0.78
Succinimide SCHEMBL1466558 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107949808-A Lower layer film for lithography forms material, lower layer film for lithography is formed with composition, lower layer film for lithography and its manufacture method, pattern formation method, resin and purification process 三菱瓦斯化学株式会社 2018-04-20 CN disclosed
EP-1788436-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2013-01-09 EP disclosed
EP-1813985-B1 Antireflection film composition, substrate, and pattering process SHINETSU CHEMICAL CO (JP) 2012-10-31 EP disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8088554-B2 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD (JP) 2012-01-03 US disclosed
US-7868407-B2 Substrate comprising a lower silicone resin film and an upper silicone resin film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-11 US disclosed
US-7745104-B2 Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-29 US disclosed
US-20100151382-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
EP-1720063-B1 Resin containing ketene-aldehyde copolymer NIPPON SODA CO (JP) 2010-04-07 EP disclosed
US-7687228-B2 Antireflection film composition and patterning process using the same SHIN ETSU CHEMICAL CO., LTD. (JP) 2010-03-30 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-7105272-B2 Acid-degradable resin compositions containing ketene-aldehyde copolymer NIPPON SODA CO., LTD. (JP) 2006-09-12 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-20050130057-A1 Acid-degradable resin compositions containing ketene-aldehyde copolymer NIPPON SODA CO., LTD. (JP) 2005-06-16 US disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050014092-A1 Novel compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-20 US disclosed
US-20040259037-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-23 US disclosed
US-20040241577-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed
EP-1482361-A1 ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER NIPPON SODA CO., LTD. (JP) 2004-12-01 EP disclosed