Pyridine

Pyridine

SCHEMBL218645

O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.c1ccncc1

nearest known ligand 0.39

Full drug profile on Sugi Atlas →

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CA2 P00918 9/20 0.39
CA1 P00915 8/20 0.39
MMP1 P03956 6/20 0.39
MMP2 P08253 6/20 0.39
MMP9 P14780 6/20 0.39
MMP8 P22894 6/20 0.39
MMP13 P45452 6/20 0.39
F2 P00734 4/20 0.36
PRSS1 P07477 4/20 0.36
PRSS2 P07478 4/20 0.36
PRSS3 P35030 4/20 0.36
TSHR P16473 1/20 0.35
NAPRT Q6XQN6 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
ALDH1A1 P00352 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Pyridine SCHEMBL11671525 0.98 CA2 (0.41) CA2CA1MMP1MMP2MMP9
Pyridine SCHEMBL19811111 0.98 CA2 (0.41) CA2CA1MMP1MMP2MMP9
Pyridine SCHEMBL19811051 0.98 CA2 (0.41) CA2CA1MMP1MMP2MMP9
Pyridine SCHEMBL19811340 0.98 CA2 (0.41) CA2CA1MMP1MMP2MMP9
Pyridine SCHEMBL19810912 0.98 CA2 (0.41) CA2CA1MMP1MMP2MMP9
Pyridine SCHEMBL19811612 0.98 CA2 (0.41) CA2CA1MMP1MMP2MMP9
Pyridine SCHEMBL19810963 0.98 CA2 (0.41) CA2CA1MMP1MMP2MMP9
Pyridine SCHEMBL18008585 0.98 CA2 (0.41) CA2CA1MMP1MMP2MMP9
Pyridine SCHEMBL8432532 0.94 NAPRT (0.36) CA2CA1MMP1MMP2MMP9
Pyrimidine SCHEMBL18788536 0.89 CA2 (0.39) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 184 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250216782-A1 MASKING PROCESS USING SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US claimed
CN-118251759-A Multi-level selective patterning for stacked device creation 杰米纳蒂奥公司 2024-06-25 CN claimed
CN-118215986-A Chemoselective adhesion and strength promoters in semiconductor patterning 杰米纳蒂奥公司 2024-06-18 CN claimed
CN-117941028-A Self-aligned stacking method 杰米纳蒂奥公司 2024-04-26 CN claimed
CN-117941029-A Self-aligned high-order patterning based on anti-spacer 杰米纳蒂奥公司 2024-04-26 CN claimed
CN-117916851-A Enhanced field stitching with corrective chemistry 杰米纳蒂奥公司 2024-04-19 CN claimed
CN-117916852-A Assist feature placement in semiconductor patterning 杰米纳蒂奥公司 2024-04-19 CN claimed
CN-117916854-A Narrow line cutting mask method 杰米纳蒂奥公司 2024-04-19 CN claimed
CN-117916855-A In-resist process for forming high density contacts 杰米纳蒂奥公司 2024-04-19 CN claimed
CN-117916853-A Formation of a multi-line etched substrate 杰米纳蒂奥公司 2024-04-19 CN claimed
CN-117916668-A Optimization for localized chemical exposure 杰米纳蒂奥公司 2024-04-19 CN claimed
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4610254-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2025-09-03 EP disclosed
US-20070122740-A1 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-20060204891-A1 Etching resistance; novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-09-14 US disclosed
US-20060019195-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-26 US disclosed
US-20060014106-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-01-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 CA2 291/4885CA1 29/4885MMP1 744/4885
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM CA2 1035/4885CA1 467/4885MMP1 3188/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.