SCHEMBL2196342

SCHEMBL2196342

C=Cc1c(Cl)cccc1Oc1cccc(Cl)c1C=C

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.43
KMT2A Q03164 2/20 0.43
MEN1 O00255 1/20 0.43
TDP1 Q9NUW8 1/20 0.43
RHEB Q15382 1/20 0.36
HPGD P15428 2/20 0.35
DPP4 P27487 1/20 0.35
HSP90AA1 P07900 1/20 0.34
SLC6A2 P23975 3/20 0.34
SLC6A4 P31645 3/20 0.34
SLC6A3 Q01959 3/20 0.34
KDM1A O60341 1/20 0.34
SMN1; SMN2 Q16637 3/20 0.33
HTR1A P08908 2/20 0.33
CYP1A2 P05177 1/20 0.33
CYP2A6 P11509 1/20 0.33
SLC22A1 O15245 1/20 0.33
ADRA2A P08913 1/20 0.33
CHRM1 P11229 1/20 0.33
ADRA2B P18089 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10499152 0.87 DPP4 (0.53) ALDH1A1KMT2ATDP1HPGDDPP4
SCHEMBL18718123 0.83 NFE2L2 (0.41) ALDH1A1KMT2AMEN1TDP1HPGD
SCHEMBL181965 0.81 ALDH1A1 (0.55) ALDH1A1KMT2AMEN1TDP1HPGD
SCHEMBL20800776 0.79 ALDH1A1 (0.36) ALDH1A1KMT2AMEN1TDP1HPGD
SCHEMBL6727676 0.79 SLC6A2 (0.41) ALDH1A1HPGDDPP4SLC6A2SLC6A4
SCHEMBL27920138 0.79 ALDH1A1 (0.52) ALDH1A1KMT2AMEN1TDP1HPGD
SCHEMBL16334874 0.77 NFE2L2 (0.41) ALDH1A1KMT2AMEN1TDP1HSP90AA1
SCHEMBL20541477 0.76 BACE1 (0.36) ALDH1A1KMT2AMEN1TDP1HPGD
SCHEMBL8363460 0.76 ALDH1A1 (0.44) ALDH1A1KMT2AMEN1TDP1HSP90AA1
SCHEMBL1144734 0.76 ALDH1A1 (0.38) ALDH1A1KMT2AHPGDSMN1; SMN2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115210219-A Oxime ester photoinitiators 巴斯夫欧洲公司 2022-10-18 CN disclosed
CN-113316744-A Oxime ester photoinitiators with specific aroyl chromophores 巴斯夫欧洲公司 2021-08-27 CN disclosed
US-7976914-B2 Resin film, production method thereof, polarizing plate and liquid crystal display device FUJIFILM CORPORATON (JP) 2011-07-12 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed
US-20070290168-A1 Resin film, production method thereof, polarizing plate and liquid crystal display device FUJIFILM CORPORATION (JP) 2007-12-20 US disclosed
CN-101023084-A Compositions containing phthalocyanine dyes CIBA SC HOLDING AG (CH) 2007-08-22 CN disclosed
US-20070148585-A1 Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer LION CORPORATION. 2007-06-28 US disclosed
EP-1698645-A1 HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER Lion Corporation (JP) 2006-09-06 EP disclosed
EP-1692094-A2 BOTTOM ANTIREFLECTIVE COATINGS AZ Electronic Materials USA Corp. (US) 2006-08-23 EP disclosed
US-7030201-B2 Bottom antireflective coatings AZ ELECTRONIC MATERIALS USA CORP. (US) 2006-04-18 US disclosed
EP-0851300-B1 Bottom anti-reflective coating material composition and method of forming resist pattern using the same FUJI PHOTO FILM CO LTD (JP) 2001-10-24 EP disclosed
EP-0823661-B1 Composition for anti-reflective coating material FUJI PHOTO FILM CO LTD (JP) 2001-07-04 EP disclosed
US-6248500-B1 ACRYLIC POLYMERS AND PHENOL, NAPHTHOL OR HYDROXYANTHRACENE COMPOUNDS FUJI PHOTO FILM CO., LTD. (JP) 2001-06-19 US disclosed
EP-1077392-A1 Photosensitive lithographic printing plate FUJI PHOTO FILM CO., LTD. (JP) 2001-02-21 EP disclosed
US-6165684-A Bottom anti-reflective coating material composition and method for forming resist pattern using the same FUJI PHOTO FILM CO., LTD. (JP) 2000-12-26 US disclosed
US-6090531-A UNDERGOES NO INTERMIXING WITH THE RESIST LAYER, PROVIDES AN EXCELLENT RESIST PATTERN AND SHOWS A HIGHER DRY ETCHING RATE THAN RESIST AND A RESIST PATTERN FORMATION PROCESS FUJI PHOTO FILM CO., LTD. (JP) 2000-07-18 US disclosed
EP-0989463-A2 Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern FUJI PHOTO FILM CO., LTD. (JP) 2000-03-29 EP disclosed
EP-0851300-A1 Bottom anti-reflective coating material composition and method of forming resist pattern using the same FUJI PHOTO FILM CO., LTD. (JP) 1998-07-01 EP disclosed
EP-0823661-A1 Composition for anti-reflective coating material FUJI PHOTO FILM CO., LTD. (JP) 1998-02-11 EP disclosed
US-4916053-A INCLUDING AN AMIDE-OR IMIDE-CONTAINING VINYL POLYMER IN THE CRYSTALLINE EMULSION LAYER; HIGH SENSITIVITY, GOOD GRAININESS AND LOW FOG IN NEGATIVE-TYPE MATERIEALS FUJI PHOTO FILM CO., LTD. (JP) 1990-04-10 US disclosed