⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2106157 | 0.94 | — | — | |
| SCHEMBL42699 | 0.94 | — | — | |
| SCHEMBL87723 | 0.94 | — | — | |
| SCHEMBL1370295 | 0.88 | — | — | |
| SCHEMBL404488 | 0.88 | — | — | |
| SCHEMBL5668574 | 0.88 | — | — | |
| SCHEMBL2003291 | 0.88 | — | — | |
| SCHEMBL356290 | 0.88 | — | — | |
| SCHEMBL16910221 | 0.88 | — | — | |
| SCHEMBL1369334 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 232 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118317599-A | Memory unit, preparation method thereof, memory and electronic equipment | 北京超弦存储器研究院 | 2024-07-09 | — | — | CN | claimed |
| CN-111279166-B | Bandgap measurement of patterned film stacks using spectral metrology | 科磊股份有限公司 | 2022-12-16 | — | — | CN | claimed |
| CN-111279166-A | Bandgap measurement of patterned film stacks using spectral metrology | 科磊股份有限公司 | 2020-06-12 | — | — | CN | claimed |
| US-10580684-B2 | Self-aligned single diffusion break for fully depleted silicon-on-insulator and method for producing the same | GLOBALFOUNDRIES INC. (KY) | 2020-03-03 | — | — | US | claimed |
| US-20190318955-A1 | SELF-ALIGNED SINGLE DIFFUSION BREAK FOR FULLY DEPLETED SILICON-ON-INSULATOR AND METHOD FOR PRODUCING THE SAME | GLOBALFOUNDRIES U.S. INC. | 2019-10-17 | — | — | US | claimed |
| US-RE46957-E1 | Nonvolatile semiconductor memory device | TOSHIBA MEMORY CORPORATION (JP) | 2018-07-17 | — | — | US | claimed |
| CN-101944675-B | The composite component of electric connector and manufacture the method for this composite component | TYCO ELECTRONICS CORP. (US) | 2016-01-27 | — | — | CN | claimed |
| CN-103107072-B | A kind of manufacture method of multiple gate field effect transistor device | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION (CN) | 2015-11-25 | — | — | CN | claimed |
| US-9196472-B2 | Processing liquid for suppressing pattern collapse of fine metal structure, and method for producing fine metal structure using same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-11-24 | — | — | US | claimed |
| US-8896052-B2 | Nonvolatile semiconductor memory device and method of manufacturing the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-11-25 | — | — | US | claimed |
| CN-101944675-A | The composite component of electric connector and make the method for this composite component | TYCO ELECTRONICS CORP | 2011-01-12 | — | — | CN | claimed |
| US-20100327340-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-12-30 | — | — | US | claimed |
| US-7843740-B2 | Method for driving a nonvolatile semiconductor memory device | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-11-30 | — | — | US | claimed |
| US-20090244984-A1 | METHOD FOR DRIVING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2009-10-01 | — | — | US | claimed |
| US-20090200616-A1 | SEMICONDUCTOR DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2009-08-13 | — | — | US | claimed |
| CN-100503251-C | Electrostatic actuator, droplet discharge head and droplet discharge apparatus | SEIKO EPSON CORP (JP) | 2009-06-24 | — | — | CN | claimed |
| US-20080001209-A1 | Non-volatile memory device and method of manufacturing the non-volatile memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-03 | — | — | US | claimed |
| CN-1847003-A | Electrostatic actuator, liquid-jet head, liquid-jet apparatus, device including electrostatic actuator, method for manufacturing liquid-jet head | SEIKO EPSON CORP (JP) | 2006-10-18 | — | — | CN | claimed |
| CN-1788999-A | Electrostatic actuator, droplet discharge head and method for manufacturing the droplet discharge head, droplet discharge apparatus, and device | SEIKO EPSON CORP (JP) | 2006-06-21 | — | — | CN | claimed |
| US-20060042544-A1 | Film formation apparatus and method of using the same | TOKYO ELECTRON LIMITED (JP) | 2006-03-02 | — | — | US | claimed |