SCHEMBL22101172

SCHEMBL22101172

COc1ccc(CCSN)cc1

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 1/20 0.61
MAOB P27338 2/20 0.55
AOC3 Q16853 2/20 0.53
IDO1 P14902 4/20 0.50
AGXT P21549 2/20 0.50
CALM1 P0DP23 1/20 0.50
LTA4H P09960 1/20 0.50
KDM4E B2RXH2 1/20 0.49
ALDH1A1 P00352 1/20 0.49
SIGMAR1 Q99720 1/20 0.48
CA12 O43570 1/20 0.47
CA1 P00915 1/20 0.47
CA2 P00918 1/20 0.47
CA5A P35218 1/20 0.47
CA9 Q16790 1/20 0.47
CA14 Q9ULX7 1/20 0.47
F2RL1 P55085 1/20 0.47
TUBB4A P04350 1/20 0.47
TUBB P07437 1/20 0.47
TUBA3C P0DPH7 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11157781 0.83 TAAR1 (0.59) TAAR1MAOBAOC3IDO1CALM1
SCHEMBL6011833 0.83 TAAR1 (0.59) TAAR1MAOBAOC3IDO1CALM1
SCHEMBL19072185 0.81 TAAR1 (0.57) TAAR1MAOBAOC3IDO1CALM1
SCHEMBL834551 0.79 TAAR1 (0.73) TAAR1MAOBAOC3IDO1AGXT
SCHEMBL18400708 0.79 TAAR1 (0.55) TAAR1MAOBAOC3IDO1CALM1
SCHEMBL9196121 0.76 NOS1 (0.72) TAAR1MAOBIDO1CALM1ALDH1A1
SCHEMBL2846166 0.76 TAAR1 (0.61) TAAR1MAOBAOC3IDO1AGXT
SCHEMBL4634 0.76 TAAR1 (1.00) TAAR1MAOBAOC3IDO1AGXT
SCHEMBL21628358 0.76 CYP1A2 (0.56) TAAR1IDO1AGXTALDH1A1
SCHEMBL2355634 0.76 LTA4H (0.75) TAAR1LTA4HSIGMAR1TUBB4ATUBB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11177449-B2 P-type semiconductor layer, P-type multilevel element, and manufacturing method for the element INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY (KR) 2021-11-16 US disclosed
US-20200194699-A1 P-TYPE SEMICONDUCTOR LAYER, P-TYPE MULTILEVEL ELEMENT, AND MANUFACTURING METHOD FOR THE ELEMENT INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY (KR) 2020-06-18 US disclosed