Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 4/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.35 |
| ▸ | THRB | P10828 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2272086 | 0.94 | TSHR (0.32) | TSHRLMNATDP1THRB | |
| SCHEMBL3481875 | 0.94 | TSHR (0.35) | TSHRLMNATDP1THRBALDH1A1 | |
| SCHEMBL27956383 | 0.92 | TSHR (0.42) | TSHRLMNATHRBALDH1A1 | |
| SCHEMBL12504083 | 0.88 | TSHR (0.44) | TSHRLMNATHRBALDH1A1 | |
| SCHEMBL12504326 | 0.88 | TSHR (0.44) | TSHRLMNATHRBALDH1A1 | |
| SCHEMBL12504584 | 0.88 | TSHR (0.44) | TSHRLMNATHRBALDH1A1 | |
| SCHEMBL348204 | 0.87 | TSHR (0.40) | TSHRLMNATDP1THRBALDH1A1 | |
| SCHEMBL9746242 | 0.85 | TSHR (0.39) | TSHRLMNATDP1THRBALDH1A1 | |
| SCHEMBL706714 | 0.84 | TSHR (0.38) | TSHRLMNATDP1THRBALDH1A1 | |
| SCHEMBL703090 | 0.84 | TSHR (0.38) | TSHRLMNATDP1THRBALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115605530-A | Polycarbosilazanes, compositions comprising the same, and methods of making silicon-containing films using the same | 默克专利有限公司（DE） | 2023-01-13 | — | — | CN | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |