SCHEMBL22729347

SCHEMBL22729347

O[C](Cl)C(Cl)(Cl)C(Cl)(Cl)Cl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL147891 0.70 THRB (0.31)
SCHEMBL18243580 0.70 THRB (0.31)
SCHEMBL27891621 0.67
SCHEMBL16499789 0.67
SCHEMBL11669348 0.64
SCHEMBL1577631 0.64 ALDH1A1 (0.35)
SCHEMBL2583565 0.64
SCHEMBL248437 0.64 ALDH1A1 (0.53)
SCHEMBL7627796 0.62
Carbon Tetrachloride SCHEMBL10754436 0.59

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20210040290-A1 COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING INSULATING FILM MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-02-11 US disclosed
EP-3747954-A1 COMPOSITION, RESIST-PATTERN FORMING METHOD, AND INSULATING-FILM FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-09 EP disclosed
CN-111630111-A Composition, method for forming resist pattern, and method for forming insulating film 三菱瓦斯化学株式会社 2020-09-04 CN disclosed