⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL445597 | 0.87 | — | — | |
| Water SCHEMBL445598 | 0.87 | — | — | |
| SCHEMBL28122554 | 0.87 | — | — | |
| SCHEMBL28325110 | 0.82 | — | — | |
| SCHEMBL3629828 | 0.82 | — | — | |
| SCHEMBL28243352 | 0.82 | — | — | |
| SCHEMBL33670 | 0.82 | — | — | |
| SCHEMBL934982 | 0.82 | — | — | |
| Water SCHEMBL22582402 | 0.78 | — | — | |
| SCHEMBL10762299 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2891181-B1 | RESISTIVE MEMORY DEVICES | MICRON TECHNOLOGY INC (US) | 2017-11-29 | — | — | EP | claimed |
| CN-104685626-B | Resistive memory device | 美光科技公司 | 2017-03-15 | — | — | CN | claimed |
| CN-103165638-B | Stack type semiconductor memory device | 爱思开海力士有限公司 | 2016-12-21 | — | — | CN | claimed |
| US-11765914-B2 | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells | HEFEI RELIANCE MEMORY LIMITED (CN) | 2023-09-19 | — | — | US | disclosed |
| US-20220190036-A1 | MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS | HEFEI RELIANCE MEMORY LIMITED (CN) | 2022-06-16 | — | — | US | disclosed |
| US-11037987-B2 | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells | HEFEI RELIANCE MEMORY LIMITED (CN) | 2021-06-15 | — | — | US | disclosed |
| US-20210098534-A1 | MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS | HEFEI RELIANCE MEMORY LIMITED (CN) | 2021-04-01 | — | — | US | disclosed |
| US-20200119094-A1 | MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS | UNITY SEMICONDUCTOR CORPORATION | 2020-04-16 | — | — | US | disclosed |
| CN-110192277-A | Reconfigurable integrated circuit and operating principle | 诺基亚美国公司 | 2019-08-30 | — | — | CN | disclosed |
| CN-110178310-A | For the control system of reconfigurable integrated circuit | 诺基亚美国公司 | 2019-08-27 | — | — | CN | disclosed |
| US-20190157348-A1 | MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS | UNITY SEMICONDUCTOR CORPORATION | 2019-05-23 | — | — | US | disclosed |
| US-20140346435-A1 | MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS | UNITY SEMICONDUCTOR CORPORATION (US) | 2014-11-27 | — | — | US | disclosed |
| CN-103247653-A | Three-dimensional memory array adjacent to trench sidewall and manufacturing method thereof | MACRONIX INT CO LTD | 2013-08-14 | — | — | CN | disclosed |
| US-20130082232-A1 | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells | UNITY SEMICONDUCTOR CORPORATION (US) | 2013-04-04 | — | — | US | disclosed |
| US-20130043452-A1 | Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements | UNITY SEMICONDUCTOR CORPORATION (US) | 2013-02-21 | — | — | US | disclosed |
| US-8268667-B2 | Memory device using ion implant isolated conductive metal oxide | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-09-18 | — | — | US | disclosed |
| US-20110315948-A1 | Memory Device Using Ion Implant Isolated Conductive Metal Oxide | UNITY SEMICONDUCTOR CORPORATION (US) | 2011-12-29 | — | — | US | disclosed |
| US-20110315943-A1 | Memory Device Using A Dual Layer Conductive Metal Oxide Structure | UNITY SEMICONDUCTOR CORPORATION (US) | 2011-12-29 | — | — | US | disclosed |
| US-8003511-B2 | Memory cell formation using ion implant isolated conductive metal oxide | UNITY SEMICONDUCTOR CORPORATION | 2011-08-23 | — | — | US | disclosed |
| US-20100159641-A1 | Memory cell formation using ion implant isolated conductive metal oxide | UNITY SEMICONDUCTOR CORPORATION (US) | 2010-06-24 | — | — | US | disclosed |