⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10762299 | 0.87 | — | — | |
| SCHEMBL2297907 | 0.87 | — | — | |
| Water SCHEMBL445598 | 0.75 | — | — | |
| SCHEMBL28122554 | 0.75 | — | — | |
| SCHEMBL30397317 | 0.71 | — | — | |
| SCHEMBL716406 | 0.71 | — | — | |
| SCHEMBL33670 | 0.71 | — | — | |
| SCHEMBL934982 | 0.71 | — | — | |
| SCHEMBL31531895 | 0.71 | — | — | |
| SCHEMBL28243352 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8493771-B2 | Non-volatile memory device ion barrier | UNITY SEMICONDUCTOR CORPORATION (US) | 2013-07-23 | — | — | US | disclosed |
| US-8339867-B2 | Fuse elements based on two-terminal re-writeable non-volatile memory | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-12-25 | — | — | US | disclosed |
| US-20120300535-A1 | NON-VOLATILE MEMORY DEVICE ION BARRIER | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-11-29 | — | — | US | disclosed |
| US-8320179-B2 | Dual ported non volatile FIFO with third dimension memory | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-11-27 | — | — | US | disclosed |
| US-8295073-B2 | Non-volatile dual port third dimensional memory | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-10-23 | — | — | US | disclosed |
| US-20120257438-A1 | CONTEMPORANEOUS MARGIN VERIFICATION AND MEMORY ACCESS FOR MEMORY CELLS IN CROSS POINT MEMORY ARRAYS | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-10-11 | — | — | US | disclosed |
| US-8274817-B2 | Non volatile memory device ion barrier | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-09-25 | — | — | US | disclosed |
| US-8271855-B2 | Memory scrubbing in third dimension memory | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-09-18 | — | — | US | disclosed |
| US-8259520-B2 | Columnar replacement of defective memory cells | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-09-04 | — | — | US | disclosed |
| US-20120217466-A1 | Digital Potentiometer Using Third Dimensional Memory | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-08-30 | — | — | US | disclosed |
| US-7505347-B2 | Method for sensing a signal in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION (US) | 2009-03-17 | — | — | US | disclosed |
| US-7436723-B2 | Method for two-cycle sensing in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION | 2008-10-14 | — | — | US | disclosed |
| US-20080159046-A1 | Method for two-cycle sensing in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION (US) | 2008-07-03 | — | — | US | disclosed |
| US-20080144357-A1 | Method for sensing a signal in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION (US) | 2008-06-19 | — | — | US | disclosed |
| US-7379364-B2 | Sensing a signal in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION | 2008-05-27 | — | — | US | disclosed |
| US-7372753-B1 | Two-cycle sensing in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION | 2008-05-13 | — | — | US | disclosed |
| US-20080094929-A1 | TWO-CYCLE SENSING IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT | III HOLDINGS 1, LLC | 2008-04-24 | — | — | US | disclosed |
| US-20080094876-A1 | SENSING A SIGNAL IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT | UNITY SEMICONDUCTOR, INC. | 2008-04-24 | — | — | US | disclosed |
| US-20080084727-A1 | Scaleable memory systems using third dimension memory | UNITY SEMICONDUCTOR, INC. | 2008-04-10 | — | — | US | disclosed |
| US-20070105390-A1 | Oxygen depleted etching process | UNITY SEMICONDUCTOR, INC. | 2007-05-10 | — | — | US | disclosed |