Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL22582402 | 0.89 | — | — | |
| Water SCHEMBL10762306 | 0.87 | — | — | |
| SCHEMBL2297907 | 0.87 | — | — | |
| Water SCHEMBL28210431 | 0.75 | — | — | |
| Water SCHEMBL16241330 | 0.75 | — | — | |
| Water SCHEMBL23300491 | 0.75 | — | — | |
| SCHEMBL28122554 | 0.75 | — | — | |
| SCHEMBL445597 | 0.75 | — | — | |
| Water SCHEMBL28544604 | 0.75 | — | — | |
| Water SCHEMBL28264912 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-102683582-A | Method for manufacturing high sensitivity magnetic sensor chip | BINGJUN QU | 2012-09-19 | — | — | CN | claimed |
| CN-100495683-C | A method for making resistor random memory unit array | INST OF PHYSICS CAS (CN) | 2009-06-03 | — | — | CN | claimed |
| CN-110275694-B | Apparatus for generating sum of products and method of operating the same | 旺宏电子股份有限公司 | 2023-08-22 | — | — | CN | disclosed |
| CN-107946461-B | Ferroelectric resistive random access memory and writing method, reading method and preparation method thereof | 南方科技大学 | 2021-10-19 | — | — | CN | disclosed |
| CN-110275694-A | For generating the device and its operating method of long-pending item sum | 旺宏电子股份有限公司 | 2019-09-24 | — | — | CN | disclosed |
| CN-106252204-B | A method of by huge magnetic resistance manganese-salt phosphating in graphics of nanometer dimension | 复旦大学 | 2019-05-31 | — | — | CN | disclosed |
| CN-104752455-B | Nonvolatile semiconductor memory member | 爱思开海力士有限公司 | 2019-05-10 | — | — | CN | disclosed |
| CN-107946461-A | Ferroelectric resistive random access memory and writing method, reading method and preparation method thereof | 南方科技大学 | 2018-04-20 | — | — | CN | disclosed |
| CN-106252204-A | A kind of by huge magnetic resistance manganese-salt phosphating in the method for graphics of nanometer dimension | 复旦大学 | 2016-12-21 | — | — | CN | disclosed |
| US-8493771-B2 | Non-volatile memory device ion barrier | UNITY SEMICONDUCTOR CORPORATION (US) | 2013-07-23 | — | — | US | disclosed |
| US-8339867-B2 | Fuse elements based on two-terminal re-writeable non-volatile memory | UNITY SEMICONDUCTOR CORPORATION (US) | 2012-12-25 | — | — | US | disclosed |
| US-20080144357-A1 | Method for sensing a signal in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION (US) | 2008-06-19 | — | — | US | disclosed |
| US-7379364-B2 | Sensing a signal in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION | 2008-05-27 | — | — | US | disclosed |
| US-7372753-B1 | Two-cycle sensing in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION | 2008-05-13 | — | — | US | disclosed |
| CN-101174672-A | Memory cell and process thereof | MACRONIX INT CO LTD (CN) | 2008-05-07 | — | — | CN | disclosed |
| US-20080094929-A1 | TWO-CYCLE SENSING IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT | III HOLDINGS 1, LLC | 2008-04-24 | — | — | US | disclosed |
| US-20080094876-A1 | SENSING A SIGNAL IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT | UNITY SEMICONDUCTOR, INC. | 2008-04-24 | — | — | US | disclosed |
| US-20080084727-A1 | Scaleable memory systems using third dimension memory | UNITY SEMICONDUCTOR, INC. | 2008-04-10 | — | — | US | disclosed |
| CN-101079395-A | A method for making resistor random memory unit array | INST OF PHYSICS CAS (CN) | 2007-11-28 | — | — | CN | disclosed |
| US-20070105390-A1 | Oxygen depleted etching process | UNITY SEMICONDUCTOR, INC. | 2007-05-10 | — | — | US | disclosed |