Pyromellitic Acid

Pyromellitic Acid

SCHEMBL2337892

N.N.N.N.O=C(O)c1cc(C(=O)O)c(C(=O)O)cc1C(=O)O

nearest known ligand 0.50

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.50
ALOX15 P16050 2/20 0.50
CYP1A2 P05177 1/20 0.50
CA1 P00915 4/20 0.43
CA2 P00918 4/20 0.43
CA12 O43570 3/20 0.43
CA7 P43166 3/20 0.43
CA9 Q16790 3/20 0.43
CA14 Q9ULX7 3/20 0.43
TSHR P16473 3/20 0.43
PTGS2 P35354 2/20 0.43
ALOX5 P09917 1/20 0.43
HSD17B10 Q99714 4/20 0.42
HPGD P15428 3/20 0.42
CYP2C9 P11712 3/20 0.42
CDC25A P30304 1/20 0.42
CDC25B P30305 1/20 0.42
ALOX12 P18054 1/20 0.42
ATIC P31939 1/20 0.42
KMT2A Q03164 4/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Pyromellitic Acid SCHEMBL27405370 1.00 ALDH1A1 (0.50) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL22982083 1.00 ALDH1A1 (0.50) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL22127 0.96 ALDH1A1 (0.53) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL22443 0.96 ALDH1A1 (0.53) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL5969075 0.92 ALDH1A1 (0.50) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL7456153 0.92 ALDH1A1 (0.50) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL21328420 0.92 ALDH1A1 (0.50) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL7732131 0.92 ALDH1A1 (0.50) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL692530 0.92 ALDH1A1 (0.50) ALDH1A1ALOX15CYP1A2CA1CA2
Pyromellitic Acid SCHEMBL11316481 0.92 ALDH1A1 (0.50) ALDH1A1ALOX15CYP1A2CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0680078-B1 Semiconductor substrate surface treatment MITSUBISHI GAS CHEMICAL CO (JP) 2003-03-12 EP claimed
US-5972862-A COMPRISING A FLUORINE-CONTAINING COMPOUND, A WATER-SOLUBLE OR WATER-MISCIBLE ORGANIC SOLVENT, AN ORGANIC ACID, AND A QUATERNARY AMMONIUM SALT MITSUBISHI GAS CHEMICAL (JP) 1999-10-26 US claimed
US-5630904-A Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent MITSUBISHI GAS CHEMICAL CO., INC. (JP) 1997-05-20 US claimed
EP-0680078-A2 Semiconductor substrate surface treatment MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1995-11-02 EP claimed
CN-112661594-B Efficient separation method for acetylene in mixed gas 太原理工大学 2023-04-21 CN disclosed
CN-112619611-B Acetylene efficient separation material 太原理工大学 2022-06-07 CN disclosed
CN-112657471-B Preparation method of low-concentration acetylene efficient trapping agent 太原理工大学 2022-05-20 CN disclosed
US-8258221-B2 Polylactic acid-based resin composition and molded article of polylactic acid-based resin FUJI XEROX CO., LTD. (JP) 2012-09-04 US disclosed
US-20110207865-A1 POLYLACTIC ACID-BASED RESIN COMPOSITION AND MOLDED ARTICLE OF POLYLACTIC ACID-BASED RESIN FUJI XEROX CO., LTD. (JP) 2011-08-25 US disclosed
EP-0680078-B1 Semiconductor substrate surface treatment MITSUBISHI GAS CHEMICAL CO (JP) 2003-03-12 EP disclosed
US-6265309-B1 Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same MITSUBISHI GAS CHEMICALS CO., INC. (JP) 2001-07-24 US disclosed
US-5972862-A COMPRISING A FLUORINE-CONTAINING COMPOUND, A WATER-SOLUBLE OR WATER-MISCIBLE ORGANIC SOLVENT, AN ORGANIC ACID, AND A QUATERNARY AMMONIUM SALT MITSUBISHI GAS CHEMICAL (JP) 1999-10-26 US disclosed
EP-0827188-A2 Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1998-03-04 EP disclosed
US-5630904-A Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent MITSUBISHI GAS CHEMICAL CO., INC. (JP) 1997-05-20 US disclosed
EP-0680078-A2 Semiconductor substrate surface treatment MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1995-11-02 EP disclosed