Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | MAPT | P10636 | 2/20 | 0.33 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.33 |
| ▸ | SLC7A5 | Q01650 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.31 |
| ▸ | GPR55 | Q9Y2T6 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19056892 | 0.97 | TP53 (0.40) | TP53ALDH1A1MAPTPTGS1SLC7A5 | |
| SCHEMBL2467543 | 0.97 | TP53 (0.40) | TP53ALDH1A1MAPTPTGS1SLC7A5 | |
| SCHEMBL2355710 | 0.94 | TP53 (0.38) | TP53ALDH1A1MAPTPTGS1SLC7A5 | |
| SCHEMBL30394140 | 0.94 | TP53 (0.38) | TP53ALDH1A1MAPTPTGS1SLC7A5 | |
| SCHEMBL1397144 | 0.82 | CA1 (0.35) | TP53ALDH1A1MAPTTSHRHSP90AA1 | |
| SCHEMBL7131396 | 0.77 | ALDH1A1 (0.36) | TP53ALDH1A1MAPTPTGS1TSHR | |
| SCHEMBL10369359 | 0.76 | TP53 (0.36) | TP53ALDH1A1MAPTPTGS1SLC7A5 | |
| SCHEMBL4799234 | 0.76 | HSP90AA1 (0.31) | TP53ALDH1A1MAPTTSHRHSP90AA1 | |
| SCHEMBL8921805 | 0.76 | ALDH1A1 (0.42) | TP53ALDH1A1MAPTPTGS1SLC7A5 | |
| SCHEMBL8459222 | 0.74 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2005081789-A2 | Formation of CIGS Absorber Layer by Atomic Layer Deposition | NANOSOLAR, INC. (US) | 2005-09-09 | — | — | WO | claimed |
| US-20050186342-A1 | Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination | NANOSOLAR, INC. (US) | 2005-08-25 | — | — | US | claimed |
| US-8809678-B2 | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells | AERIS CAPITAL SUSTAINABLE IP LTD. (KY) | 2014-08-19 | — | — | US | disclosed |
| US-20120211074-A1 | Coated Nanoparticles and Quantum Dots for Solution-Based Fabrication of Photovoltaic Cells | AERIS CAPITAL SUSTAINABLE IP LTD. (KY) | 2012-08-23 | — | — | US | disclosed |
| US-8193442-B2 | Core particles containing one or more elements from group IB and/or IIIA and/or VIA are coated with one or more layers of metal from group IB, IIIA or an element from group VIA in a controlled fashion; coated nanoparticles have a desired stoichiometric ratio of elements; ink, paste or paint | NANOSOLAR, INC. (US) | 2012-06-05 | — | — | US | disclosed |
| US-20110189815-A1 | FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT ON COILED FLEXIBLE SUBSTRATES | NANOSOLAR, INC. | 2011-08-04 | — | — | US | disclosed |
| US-7858151-B2 | Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination | NANOSOLAR, INC. (US) | 2010-12-28 | — | — | US | disclosed |
| US-20090025640-A1 | FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT | AERIS CAPITAL SUSTAINABLE IP LTD. (KY) | 2009-01-29 | — | — | US | disclosed |
| US-20080305269-A1 | Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment | SAGER BRIAN M | 2008-12-11 | — | — | US | disclosed |
| US-20080149176-A1 | Core particles containing one or more elements from group IB and/or IIIA and/or VIA are coated with one or more layers of metal from group IB, IIIA or an element from group VIA in a controlled fashion; coated nanoparticles have a desired stoichiometric ratio of elements; ink, paste or paint | NANOSOLAR INC. (US) | 2008-06-26 | — | — | US | disclosed |
| US-7306823-B2 | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells | NANOSOLAR, INC. (US) | 2007-12-11 | — | — | US | disclosed |
| WO-2006135377-A2 | COATED NANOPARTICLES AND QUANTUM DOTS FOR SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELLS | NANOSOLAR, INC. (US) | 2006-12-21 | — | — | WO | disclosed |
| US-20060062902-A1 | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells | NANOSOLAR, INC. (US) | 2006-03-23 | — | — | US | disclosed |
| WO-2005081789-A2 | Formation of CIGS Absorber Layer by Atomic Layer Deposition | NANOSOLAR, INC. (US) | 2005-09-09 | — | — | WO | disclosed |
| US-20050186342-A1 | Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination | NANOSOLAR, INC. (US) | 2005-08-25 | — | — | US | disclosed |