SCHEMBL23587377

SCHEMBL23587377

Oc1ccc2c3c(ccc2c1)Oc1ccc2c(-c4cccc5c6c(c(O)cc45)Oc4c(O)cc5ccccc5c4C6c4cc(I)c(O)c(I)c4)cc(O)cc2c1C3c1cc(I)c(O)c(I)c1

nearest known ligand 0.35

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 3/20 0.35
KMT2A Q03164 3/20 0.35
NPSR1 Q6W5P4 3/20 0.34
KDM4E B2RXH2 1/20 0.33
ALDH1A1 P00352 1/20 0.33
POLB P06746 1/20 0.33
MAPT P10636 1/20 0.33
SIRT2 Q8IXJ6 1/20 0.30
TLR8 Q9NR97 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21755763 0.84 NPSR1 (0.35) MEN1KMT2ANPSR1KDM4EALDH1A1
SCHEMBL21755766 0.78 SIRT2 (0.38) MEN1KMT2ANPSR1ALDH1A1SIRT2
SCHEMBL21755762 0.74 MEN1 (0.35) MEN1KMT2AALDH1A1
SCHEMBL21755801 0.73 MEN1 (0.45) MEN1KMT2ANPSR1ALDH1A1
SCHEMBL17378267 0.71 NPSR1 (0.52) MEN1KMT2ANPSR1POLB
SCHEMBL18614335 0.71 SIRT2 (0.38) MEN1KMT2ANPSR1KDM4EALDH1A1
SCHEMBL17370910 0.69 NPSR1 (0.46) MEN1KMT2ANPSR1ALDH1A1SIRT2
SCHEMBL25706841 0.69 NPSR1 (0.55) MEN1KMT2ANPSR1POLB
SCHEMBL21755764 0.69 TRPM4 (0.38) MEN1KMT2ANPSR1KDM4EALDH1A1
SCHEMBL15998726 0.69 MEN1 (0.41) MEN1KMT2ANPSR1ALDH1A1SIRT2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3842491-A1 COMPOUND, COMPOSITION CONTAINING THE SAME, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING INSULATING FILM MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-06-30 EP disclosed