SCHEMBL21755764

SCHEMBL21755764

Oc1cc2ccccc2c2c1C(c1cc(I)c(O)c(I)c1)c1c(O)cc3ccccc3c1O2

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TRPM4 Q8TD43 1/20 0.38
SIRT2 Q8IXJ6 2/20 0.36
SIRT1 Q96EB6 2/20 0.36
SIRT5 Q9NXA8 2/20 0.36
MEN1 O00255 3/20 0.36
KMT2A Q03164 3/20 0.36
KDM4E B2RXH2 2/20 0.36
MAPT P10636 2/20 0.36
ALDH1A1 P00352 1/20 0.36
POLB P06746 1/20 0.36
NQO2 P16083 1/20 0.33
MYB P10242 1/20 0.33
L3MBTL1 Q9Y468 2/20 0.32
EYA3 Q99504 2/20 0.32
MAPK1 P28482 1/20 0.32
CYP2C19 P33261 1/20 0.32
NPSR1 Q6W5P4 1/20 0.31
PTPN22 Q9Y2R2 1/20 0.31
USP2 O75604 1/20 0.30
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23900989 0.80 TRPM4 (0.40) TRPM4MEN1KMT2AKDM4EMAPT
SCHEMBL23587376 0.75 MEN1 (0.46) TRPM4SIRT1MEN1KMT2AKDM4E
SCHEMBL21755769 0.74 LMNA (0.38) TRPM4SIRT2SIRT1SIRT5MEN1
SCHEMBL21755772 0.70 MYB (0.33) MAPTMYBEYA3CYP2C19THRB
SCHEMBL2187057 0.69 TRPM4 (0.56) TRPM4MEN1KMT2AKDM4EMAPT
SCHEMBL21755816 0.69 SHBG (0.36) MEN1KMT2AKDM4EMAPTALDH1A1
SCHEMBL23900971 0.69 KDM4E (0.47) TRPM4MEN1KMT2AKDM4EMAPT
SCHEMBL15998725 0.68 KDM4E (0.46) TRPM4MEN1KMT2AKDM4EMAPT
SCHEMBL21755766 0.67 SIRT2 (0.38) SIRT2MEN1KMT2AALDH1A1NPSR1
SCHEMBL21755801 0.65 MEN1 (0.45) MEN1KMT2AALDH1A1CYP2C19NPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3842491-A1 COMPOUND, COMPOSITION CONTAINING THE SAME, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING INSULATING FILM MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-06-30 EP disclosed
WO-2020040162-A1 COMPOUND, COMPOSITION CONTAINING SAME, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING INSULATING FILM 三菱瓦斯化学株式会社 2020-02-27 WO disclosed