SCHEMBL2401165

SCHEMBL2401165

CCCCc1c(Cc2[nH]c(Cc3[nH]c(C=O)c(C)c3CCCC)c(CC)c2CC)[nH]c(C=O)c1C

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
P2RX7 Q99572 1/20 0.33
TYMP P19971 1/20 0.32
MEN1 O00255 2/20 0.31
KMT2A Q03164 2/20 0.31
GAA P10253 1/20 0.31
TSHR P16473 1/20 0.31
ALOX12 P18054 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
MAPT P10636 2/20 0.31
KDM4E B2RXH2 2/20 0.31
ALDH1A1 P00352 1/20 0.31
LMNA P02545 1/20 0.31
CASP1 P29466 1/20 0.31
CASP7 P55210 1/20 0.31
HSD17B10 Q99714 1/20 0.31
SLCO1B3 Q9NPD5 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
SLCO1B1 Q9Y6L6 1/20 0.31
HTT P42858 1/20 0.31
PKM P14618 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6863189 0.89 IGF1R (0.33) P2RX7KMT2AALDH1A1HSD17B10
SCHEMBL4107546 0.88 P2RX7 (0.34) P2RX7MEN1KMT2AGAATSHR
SCHEMBL14864027 0.85 P2RX7 (0.36) P2RX7TYMPMEN1KMT2AGAA
SCHEMBL13228907 0.85 ALDH1A1 (0.34) P2RX7KMT2AALDH1A1HSD17B10
SCHEMBL7689059 0.81 KMT2A (0.36) P2RX7MEN1KMT2AGAATSHR
SCHEMBL1651095 0.77 ALDH1A1 (0.36) KMT2ANPSR1MAPTALDH1A1LMNA
SCHEMBL8719717 0.76 IGF1R (0.31)
SCHEMBL22674288 0.76 P2RX7 (0.30) P2RX7
SCHEMBL4279732 0.74
SCHEMBL25040359 0.73 P2RX7 (0.55) P2RX7MEN1KMT2AGAATSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8021915-B2 Field effect transistor, method of producing the same, and method of producing laminated member CANON KABUSHIKI KAISHA (JP) 2011-09-20 US disclosed
US-20090124040-A1 FIELD EFFECT TRANSISTOR, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING LAMINATED MEMBER CANON KABUSHIKI KAISHA (JP) 2009-05-14 US disclosed