Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | STS | P08842 | 5/20 | 0.36 |
| ▸ | TSHR | P16473 | 3/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.36 |
| ▸ | ESR1 | P03372 | 2/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.36 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.36 |
| ▸ | KDR | P35968 | 1/20 | 0.36 |
| ▸ | TRPV1 | Q8NER1 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 3/20 | 0.34 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.34 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.34 |
| ▸ | CA1 | P00915 | 2/20 | 0.34 |
| ▸ | CA2 | P00918 | 2/20 | 0.34 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.34 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.34 |
| ▸ | RNASEL | Q05823 | 1/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.34 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL24268497 | 0.87 | ESR1 (0.50) | TSHRTDP1ESR1ALDH1A1CHRM1 | |
| SCHEMBL12039747 | 0.86 | TDP1 (0.51) | TSHRTDP1ESR1ALDH1A1SLC6A2 | |
| SCHEMBL1656327 | 0.84 | TDP1 (0.50) | TSHRTDP1ESR1ALDH1A1SLC6A2 | |
| SCHEMBL22336425 | 0.83 | TDP1 (0.36) | STSTSHRTDP1ESR1ALDH1A1 | |
| SCHEMBL24268495 | 0.82 | SMN1; SMN2 (0.42) | STSTSHRTDP1ESR1ALDH1A1 | |
| SCHEMBL21014705 | 0.81 | ESR1 (0.52) | ESR1ALDH1A1CA1CA2CA12 | |
| SCHEMBL26343111 | 0.80 | TDP1 (0.42) | TSHRTDP1ESR1ALDH1A1CHRM1 | |
| SCHEMBL12039745 | 0.79 | HRH3 (0.47) | TDP1ALDH1A1SMN1; SMN2RAB9APTPN1 | |
| SCHEMBL12589609 | 0.78 | ESR1 (0.51) | STSTSHRTDP1ESR1ALDH1A1 | |
| SCHEMBL16214827 | 0.77 | TDP1 (0.59) | STSTDP1ALDH1A1SLC6A2LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| EP-4279991-A1 | NOVEL SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-22 | — | — | EP | disclosed |
| US-20230244142-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230244142-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230161254-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161254-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20220107560-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-04-07 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20220107560-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, KAT5, PKD1 | STS 1048/4885TSHR 3390/4885TDP1 3936/4885 |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | GFER, GNMT, DNER | STS 789/4885TSHR 2359/4885TDP1 4306/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | STS 810/4885TSHR 2101/4885TDP1 3415/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.