SCHEMBL243100

SCHEMBL243100

CCC(N)N.O=P(O)(O)CCP(=O)(O)O.O=P(O)(O)CCP(=O)(O)O.O=P(O)(O)CCP(=O)(O)O.O=P(O)(O)CCP(=O)(O)O

nearest known ligand 0.59

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LAP3 P28838 1/20 0.59
ANPEP P15144 1/20 0.52
ALDH1A1 P00352 3/20 0.50
TDP1 Q9NUW8 1/20 0.50
S1PR2 O95136 5/20 0.47
S1PR1 P21453 5/20 0.47
S1PR3 Q99500 5/20 0.47
S1PR4 O95977 4/20 0.47
METAP1 P53582 2/20 0.44
ENPEP Q07075 1/20 0.44
LPAR3 Q9UBY5 3/20 0.44
LPAR2 Q9HBW0 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6369172 0.90 LPAR3 (0.58) LAP3ANPEPALDH1A1TDP1S1PR2
Phosphoric Acid SCHEMBL29275124 0.85 LAP3 (0.60) LAP3ANPEPALDH1A1TDP1METAP1
Phosphoric Acid SCHEMBL28448377 0.85 LAP3 (0.60) LAP3ANPEPALDH1A1TDP1METAP1
Medronic Acid SCHEMBL242844 0.83 LAP3 (0.59) LAP3ANPEPALDH1A1TDP1METAP1
Phosphoric Acid SCHEMBL28859152 0.82 LAP3 (0.57) LAP3ANPEPALDH1A1TDP1METAP1
Phosphoric Acid SCHEMBL28859154 0.82 LAP3 (0.57) LAP3ANPEPALDH1A1TDP1METAP1
Ethylamine SCHEMBL11312343 0.79 ALDH1A1 (0.61) LAP3ANPEPALDH1A1TDP1LPAR3
Methylamine SCHEMBL10871952 0.78 ALDH1A1 (0.59) LAP3ANPEPALDH1A1TDP1ENPEP
SCHEMBL6512048 0.78 TYMS (0.64) ANPEPALDH1A1TDP1LPAR3LPAR2
SCHEMBL5059525 0.77 S1PR1 (0.62) LAP3ANPEPALDH1A1TDP1S1PR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11203731-B2 Composition for surface treatment and method of producing the same, surface treatment method, and method of producing semiconductor substrate FUJIMI INCORPORATED (JP) 2021-12-21 US disclosed
US-20210130735-A1 COMPOSITION FOR SURFACE TREATMENT AND METHOD OF PRODUCING THE SAME, SURFACE TREATMENT METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE FUJIMI INCORPORATED (JP) 2021-05-06 US disclosed
EP-1679361-B1 CLEANING AGENT FOR SUBSTRATE AND CLEANING METHOD WAKO PURE CHEM IND LTD (JP) 2015-06-24 EP disclosed
US-8900371-B2 Cleaning agent for substrate and cleaning method WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2014-12-02 US disclosed
US-20120000485-A1 CLEANING AGENT FOR SUBSTRATE AND CLEANING METHOD WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2012-01-05 US disclosed
US-20070235061-A1 Cleaning Agent for Substrate and Cleaning Method WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2007-10-11 US disclosed
EP-1679361-A1 CLEANING AGENT FOR SUBSTRATE AND CLEANING METHOD Wako Pure Chemical Industries, Ltd. (JP) 2006-07-12 EP disclosed
US-20050204639-A1 Polishing composition and polishing method FUJIMI INCORPORATED (JP) 2005-09-22 US disclosed
US-20050205837-A1 Polishing composition and polishing method FUJIMI INCORPORATED (JP) 2005-09-22 US disclosed