Fluoride Ion

Fluoride Ion

SCHEMBL2453932

Oc1ccc[n+](Cc2ccccc2)c1.[F-]

nearest known ligand 0.59

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Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.59
NPSR1 Q6W5P4 1/20 0.54
L3MBTL1 Q9Y468 1/20 0.54
KDM4E B2RXH2 2/20 0.52
CYP1A2 P05177 1/20 0.44
CYP2D6 P10635 1/20 0.44
ACHE P22303 3/20 0.43
ALDH1A1 P00352 3/20 0.42
CHKA P35790 3/20 0.42
HTT P42858 2/20 0.42
SMN1; SMN2 Q16637 2/20 0.42
RAB9A P51151 1/20 0.40
BCHE P06276 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8085263 0.98 LMNA (0.61) LMNANPSR1L3MBTL1KDM4ECYP1A2
Hydrochloric Acid SCHEMBL31272185 0.96 LMNA (0.65) LMNANPSR1L3MBTL1KDM4ECYP1A2
Hydrochloric Acid SCHEMBL3196752 0.96 LMNA (0.65) LMNANPSR1L3MBTL1KDM4ECYP1A2
Bromide SCHEMBL6981181 0.96 LMNA (0.59) LMNANPSR1L3MBTL1KDM4ECYP1A2
Bromide SCHEMBL31255661 0.96 LMNA (0.59) LMNANPSR1L3MBTL1KDM4ECYP1A2
SCHEMBL2737208 0.78 LMNA (0.92) LMNANPSR1L3MBTL1KDM4ECYP1A2
SCHEMBL28842894 0.78 CALM1 (0.45) LMNAL3MBTL1KDM4EHTT
Fluoride Ion SCHEMBL5148095 0.77 NPSR1 (0.71) LMNANPSR1L3MBTL1CYP1A2CYP2D6
Hydrochloric Acid SCHEMBL23611562 0.76 CALM1 (0.44) LMNAL3MBTL1KDM4EHTT
SCHEMBL13933997 0.76 LMNA (0.58) LMNANPSR1L3MBTL1KDM4ECYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2122418-B1 STRIPPER FOR COATING LAYER AZ ELECTRONIC MATERIALS USA (US) 2012-08-08 EP disclosed
US-8026201-B2 Comprising: a fluoride source, an organic quaternary ammonium base, and a solvent selected from an organic solvent, water, and mixtures thereof; for removing silicon-based anti-reflective coatings/hardmask layers from microelectronics; etch selectivity AZ ELECTRONIC MATERIALS USA CORP. (US) 2011-09-27 US disclosed
EP-2122418-A2 STRIPPER FOR COATING LAYER AZ Electronic Materials USA Corp. (US) 2009-11-25 EP disclosed
WO-2008081416-A2 STRIPPER FOR COATING LAYER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-07-10 WO disclosed
US-20080161217-A1 Stripper for Coating Layer MERCK PATENT GMBH (DE) 2008-07-03 US disclosed