SCHEMBL2473708

SCHEMBL2473708

CN(C)N=Nc1ccc(Sc2ccc(N=NN(C)C)cc2)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.50
MAPT P10636 6/20 0.43
NPC1 O15118 3/20 0.43
RAB9A P51151 3/20 0.43
ADRA2A P08913 1/20 0.40
ADRA2B P18089 1/20 0.40
ADRA2C P18825 1/20 0.40
KDM4E B2RXH2 3/20 0.40
PKM P14618 2/20 0.40
TDP1 Q9NUW8 2/20 0.40
ALDH1A1 P00352 2/20 0.36
MAPK1 P28482 3/20 0.34
TSHR P16473 2/20 0.34
HSD17B10 Q99714 1/20 0.34
NR1H2 P55055 1/20 0.33
CYP3A4 P08684 1/20 0.33
EGFR P00533 2/20 0.33
HPGD P15428 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
MEN1 O00255 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2474220 0.85 LMNA (0.61) LMNAMAPTNPC1RAB9AKDM4E
SCHEMBL2474219 0.85 LMNA (0.61) LMNAMAPTNPC1RAB9AKDM4E
SCHEMBL17991993 0.79 LMNA (0.45) LMNAMAPTNPC1RAB9AADRA2A
SCHEMBL17709235 0.76 LMNA (0.53) LMNAMAPTNPC1RAB9AKDM4E
SCHEMBL7862256 0.76 LMNA (0.53) LMNAMAPTNPC1RAB9AKDM4E
SCHEMBL14699622 0.76 LMNA (0.46) LMNAMAPTNPC1RAB9AKDM4E
SCHEMBL187587 0.73 ALDH1A1 (0.55) LMNAMAPTNPC1RAB9AKDM4E
SCHEMBL2109239 0.73 ALDH1A1 (0.55) LMNAMAPTNPC1RAB9AKDM4E
SCHEMBL2109241 0.73 ALDH1A1 (0.55) LMNAMAPTNPC1RAB9AKDM4E
SCHEMBL2474744 0.73 LMNA (0.50) LMNAMAPTNPC1RAB9AADRA2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
EP-1160848-B1 Composition for silica-based film formation JSR CORP (JP) 2011-10-05 EP disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
US-7462678-B2 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2008-12-09 US disclosed
US-7297360-B2 Insulation film JSR CORPORATION (JP) 2007-11-20 US disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 US disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
EP-1253175-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-10-11 EP disclosed
EP-1146092-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-03-08 EP disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 EP disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed