⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17001480 | 0.86 | — | — | |
| SCHEMBL19124932 | 0.82 | ALDH1A1 (0.39) | — | |
| SCHEMBL11842735 | 0.82 | ALDH1A1 (0.39) | — | |
| SCHEMBL11423106 | 0.82 | — | — | |
| SCHEMBL384552 | 0.82 | — | — | |
| SCHEMBL19145978 | 0.73 | ALDH1A1 (0.31) | — | |
| SCHEMBL621059 | 0.73 | ALDH1A1 (0.31) | — | |
| SCHEMBL22264581 | 0.71 | — | — | |
| SCHEMBL7934363 | 0.71 | — | — | |
| SCHEMBL2223039 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112899648-A | High temperature atomic layer deposition of silicon-containing films | 弗萨姆材料美国有限责任公司 | 2021-06-04 | — | — | CN | claimed |
| CN-106992114-B | High temperature atomic layer deposition of silicon-containing films | 弗萨姆材料美国有限责任公司 | 2021-02-19 | — | — | CN | claimed |
| US-10283348-B2 | High temperature atomic layer deposition of silicon-containing films | VERSUM MATERIALS US, LLC (US) | 2019-05-07 | — | — | US | claimed |
| EP-3196336-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS | Versum Materials US, LLC (US) | 2017-07-26 | — | — | EP | claimed |
| US-20170207082-A1 | High Temperature Atomic Layer Deposition of Silicon-Containing Films | VERSUM MATERIALS US, LLC (US) | 2017-07-20 | — | — | US | claimed |
| US-20160167988-A1 | PROCESS FOR REDUCING THE LEVEL OF CHLORIDE IN CHLOROSILANE DIRECT PROCESS HYDROLYZED SUBSTRATE USING MECHANOCHEMICAL TREATMENT | MOMENTIVE PERFORMANCE MATERIALS INC. | 2016-06-16 | — | — | US | claimed |
| US-9108991-B1 | Process for reducing the level of choride in chlorosilane direct process hydrolyzed substrate | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2015-08-18 | — | — | US | claimed |
| US-20080154049-A1 | for acylation of an aromatic compound, comprising reacting an aromatic compound and an acylating agent of the carboxylic acid type, in the presence of a Lewis acid and of a silylated reagent selected from the group consisting of halosilanes and halosiloxanes. | SHASUN PHARMA SOLUTIONS LIMITED (GB) | 2008-06-26 | — | — | US | claimed |
| EP-3898778-B1 | SILICOUS FILM FORMING COMPOSITION COMPRISING BLOCK COPOLYMER AND METHOD FOR PRODUCING SILICEOUS FILM USING SAME | MERCK PATENT GMBH (DE) | 2025-04-30 | — | — | EP | disclosed |
| US-12091323-B2 | Amorphous silicon forming composition comprising block copolymer and method for producing amorphous silicon film using same | MARCK PATENT GMBH (DE) | 2024-09-17 | — | — | US | disclosed |
| CN-113677744-B | Composition comprising block copolymer and method for producing siliceous film using the same | 默克专利有限公司 | 2024-08-23 | — | — | CN | disclosed |
| EP-3802667-B1 | BLOCK COPOLYMER COMPRISING BLOCK HAVING POLYSILANE SKELETON AND BLOCK HAVING POLYSILAZANE SKELETON | MERCK PATENT GMBH (DE) | 2023-12-27 | — | — | EP | disclosed |
| US-11466127-B2 | Block copolymer comprising block having polysilane skeleton and block having polysilazane skeleton | MERCK PATENT GMBH (DE) | 2022-10-11 | — | — | US | disclosed |
| US-11401384-B2 | Silicous film forming composition comprising block copolymer and method for producing siliceous film using same | MERCK PATENT GMBH (DE) | 2022-08-02 | — | — | US | disclosed |
| US-7449539-B2 | Silsesquioxane derivative and production process for the same | CHISSO CORPORATION (JP) | 2008-11-11 | — | — | US | disclosed |
| US-20080154049-A1 | for acylation of an aromatic compound, comprising reacting an aromatic compound and an acylating agent of the carboxylic acid type, in the presence of a Lewis acid and of a silylated reagent selected from the group consisting of halosilanes and halosiloxanes. | SHASUN PHARMA SOLUTIONS LIMITED (GB) | 2008-06-26 | — | — | US | disclosed |
| US-20070032454-A1 | Silsesquioxane derivative and production process for the same | JNC CORPORATION (JP) | 2007-02-08 | — | — | US | disclosed |
| US-7169873-B2 | Silsesquioxane derivatives and process for production thereof | CHISSO CORPORATION (JP) | 2007-01-30 | — | — | US | disclosed |
| US-20040249103-A1 | Silsesquioxane derivatives and process for production thereof | JNC CORPORATION (JP) | 2004-12-09 | — | — | US | disclosed |
| EP-1428795-A1 | SILSESQUIOXANE DERIVATIVES AND PROCESS FOR PRODUCTION THEREOF | CHISSO CORPORATION (JP) | 2004-06-16 | — | — | EP | disclosed |