SCHEMBL2507692

SCHEMBL2507692

CCCCCCCC[Si](C)(CCCCCCCC)N(C)[SiH](C)C

nearest known ligand 0.36

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 3/20 0.36
TSHR P16473 1/20 0.35
THRB P10828 1/20 0.35
KCNH2 Q12809 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22401727 1.00 DNM1 (0.36) DNM1TSHRTHRBKCNH2
SCHEMBL1204219 1.00 DNM1 (0.36) DNM1TSHRTHRBKCNH2
SCHEMBL328755 0.91
Octane SCHEMBL27556408 0.77 DNM1 (0.42) DNM1TSHRTHRB
Hexane SCHEMBL4630266 0.77 DNM1 (0.36) DNM1TSHRTHRB
SCHEMBL8319455 0.75 DNM1 (0.40) DNM1TSHRTHRBKCNH2
SCHEMBL8178948 0.75 DNM1 (0.40) DNM1TSHRTHRBKCNH2
SCHEMBL8193626 0.75 DNM1 (0.40) DNM1TSHRTHRBKCNH2
SCHEMBL29163071 0.74 LMNA (0.46)
SCHEMBL8319015 0.73 DNM1 (0.39) DNM1TSHRTHRBKCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9293417-B2 Method for forming barrier film on wiring line TOKYO ELECTRON LIMITED (JP) 2016-03-22 US claimed
US-8709541-B2 Method for forming a film TOKYO ELECTRON LIMITED (JP) 2014-04-29 US claimed
US-20120251721-A1 DEVICE AND METHOD FOR FORMING FILM TOKYO ELECTRON LIMITED (JP) 2012-10-04 US claimed
US-20120114869-A1 FILM FORMING METHOD TOKYO ELECTRON LIMITED (JP) 2012-05-10 US claimed
US-7129187-B2 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED (JP) 2006-10-31 US claimed
WO-2006019438-A2 LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS TOKYO ELECTRON LIMITED (JP) 2006-02-23 WO claimed
US-20060014399-A1 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED 2006-01-19 US claimed
US-20250066621-A1 COMPOSITION FOR FILM FORMATION AND METHOD FOR MANUFACTURING SUBSTRATE CENTRAL GLASS COMPANY, LIMITED (JP) 2025-02-27 US disclosed
WO-2024248021-A1 FILM-FORMING COMPOSITION, METHOD FOR PRODUCING SUBSTRATE, AND METHOD FOR PRODUCING FILM-FORMING COMPOSITION セントラル硝子株式会社 2024-12-05 WO disclosed
EP-4459666-A1 COMPOSITION FOR FILM FORMATION AND METHOD FOR PRODUCING SUBSTRATE Central Glass Company, Limited (JP) 2024-11-06 EP disclosed
CN-118451534-A Film-forming composition and method for producing substrate 中央硝子株式会社 2024-08-06 CN disclosed
WO-2024143097-A1 SUBSTRATE TREATING METHOD AND SUBSTRATE MANUFACTURING METHOD セントラル硝子株式会社 2024-07-04 WO disclosed
EP-3743464-B1 ORGANIC-INORGANIC AEROGEL COMPOSITES, METHODS AND USES THEREOF BRONX CREATIVE&DESIGN CENTRE PTE LTD (SG) 2024-03-06 EP disclosed
EP-1320884-A2 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR TOKYO ELECTRON LIMITED (JP) 2003-06-25 EP disclosed
WO-2002023625-A2 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR TOKYO ELECTRON LIMITED (JP) 2002-03-21 WO disclosed
EP-0535947-B1 Inorganic acid catalyzed silylation reactions DOW CORNING (US) 2000-05-03 EP disclosed
US-5824442-A CONTROLLING DEVELOPMENT AND DEVELOPMENT FOR ELECTROSTATIC IMAGES WITH THIN FILMS CANON KABUSHIKI KAISHA (JP) 1998-10-20 US disclosed
US-5707770-A TITANIA OR ALUMINA PARTICLES SURFACE TREATED WITH A SILICON COMPOUND OR SILICONE OIL, IMPROVED PERFORMANCE IN HIGH HUMIDITY CANON KABUSHIKI KAISHA (JP) 1998-01-13 US disclosed
US-5157139-A Inorganic acid catalysed silylation reactions DOW CORNING CORPORATION (US) 1992-10-20 US disclosed
US-4333564-A Method of controlling rheological properties of gel-like compositions SHERWOOD MEDICAL INDUSTRIES INC. (US) 1982-06-08 US disclosed