SCHEMBL251015

SCHEMBL251015

[CH2]OC1C2CC3CC(C2)CC1C3

nearest known ligand 0.38

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CYP2C9 P11712 1/20 0.38
HSD11B1 P28845 1/20 0.34
EPHX1 P07099 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL39976 0.73 CYP2C9 (0.42) CYP2C9HSD11B1EPHX1
Lithium SCHEMBL5510213 0.71 CYP2C9 (0.40) CYP2C9HSD11B1EPHX1
SCHEMBL387735 0.69 CYP2C9 (0.33) CYP2C9HSD11B1
SCHEMBL412518 0.69 CYP2C9 (0.33) CYP2C9HSD11B1
SCHEMBL13577591 0.69 CYP2C9 (0.38) CYP2C9HSD11B1EPHX1
SCHEMBL3708629 0.69 CYP2C9 (0.38) CYP2C9HSD11B1EPHX1
SCHEMBL1238711 0.69 CYP2C9 (0.38) CYP2C9HSD11B1EPHX1
SCHEMBL10584202 0.69 CYP2C9 (0.38) CYP2C9HSD11B1EPHX1
SCHEMBL14219015 0.69 CYP2C9 (0.45) CYP2C9HSD11B1EPHX1
SCHEMBL6894994 0.68 HSD11B1 (0.47) CYP2C9HSD11B1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8722321-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-13 US claimed
US-20120276485-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US claimed
US-20120270159-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-25 US claimed
US-20080318156-A1 Adamantane Based Molecular Glass Photoresists for Sub-200 Nm Lithography CORNELL RESEARCH FOUNDATION, INC. 2008-12-25 US claimed
EP-1991910-A1 ADAMANTANE BASED MOLECULAR GLASS PHOTORESISTS FOR SUB-200 NM LITHOGRAPHY Cornell Research Foundation, Inc. (US) 2008-11-19 EP claimed
WO-2007094784-A1 ADAMANTANE BASED MOLECULAR GLASS PHOTORESISTS FOR SUB-200 NM LITHOGRAPHY CORNELL RESEARCH FOUNDATION, INC. (US) 2007-08-23 WO claimed
US-20210018836-A1 PHOTORESIST COMPOSITION FOR THICK FILM AND METHOD OF FORMING THICK FILM PHOTORESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2021-01-21 US disclosed
EP-2482132-B1 Resist pattern forming process SHINETSU CHEMICAL CO (JP) 2019-10-16 EP disclosed
US-20170343897-A1 CHEMICAL FOR PHOTOLITHOGRAPHY WITH IMPROVED LIQUID TRANSFER PROPERTY AND RESIST COMPOSITION COMPRISING THE SAME TOKYO OHKA KOGYO CO LTD (JP) 2017-11-30 US disclosed
US-20160306278-A1 CHEMICAL FOR PHOTOLITHOGRAPHY WITH IMPROVED LIQUID TRANSFER PROPERTY AND RESIST COMPOSITION COMPRISING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2016-10-20 US disclosed
US-9057949-B2 Patterning process, resist composition, polymer, and polymerizable ester compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-16 US disclosed
US-8859187-B2 Method of forming resist pattern and negative resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-10-14 US disclosed
US-8835092-B2 Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
US-20090029288-A1 METHOD FOR PRODUCING RESIST COMPOSITION AND RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-29 US disclosed
US-20090023102-A1 POSITIVE RESIST COMPOSITION FOR FORMING THICK-FILM RESIST, THICK-FILM RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2009-01-22 US disclosed
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080063974-A1 Positive Resist Composition and Method for Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-03-13 US disclosed
EP-1895576-A1 PATTERN COATING MATERIAL AND PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2008-03-05 EP disclosed
US-20080008965-A1 Ester compounds and their preparation, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-10 US disclosed
EP-1813990-A1 METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-01 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process MDM4, MUS81, NOP2 CYP2C9 2755/4885HSD11B1 4388/4885EPHX1 1509/4885
US-20080008965-A1 Ester compounds and their preparation, polymers, resist compositions and patterning process ESR1, H1-2, H1-4 CYP2C9 1497/4885HSD11B1 1579/4885EPHX1 93/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.