Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL27471171 | 0.87 | — | — | |
| Water SCHEMBL27516075 | 0.87 | — | — | |
| Water SCHEMBL28047894 | 0.87 | — | — | |
| Water SCHEMBL6700008 | 0.67 | — | — | |
| Water SCHEMBL22722943 | 0.67 | — | — | |
| Water SCHEMBL23069278 | 0.67 | — | — | |
| Water SCHEMBL4932222 | 0.67 | — | — | |
| Water SCHEMBL22612537 | 0.67 | — | — | |
| Water SCHEMBL3106776 | 0.67 | — | — | |
| Water SCHEMBL5634853 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 65 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110283518-A | A kind of electric submersible pumping well casing coating, preparation method and application | 胜利油田新大管业科技发展有限责任公司 | 2019-09-27 | — | — | CN | claimed |
| CN-107785247-A | The manufacture method of metal gates and semiconductor devices | 中芯国际集成电路制造(上海)有限公司 | 2018-03-09 | — | — | CN | claimed |
| CN-107623033-A | More raceway groove all-around-gate pole devices and its manufacture method | 中芯国际集成电路制造(上海)有限公司 | 2018-01-23 | — | — | CN | claimed |
| CN-222916511-U | Semiconductor structure | 台积电(中国)有限公司 | 2025-05-27 | — | — | CN | disclosed |
| CN-222653957-U | Semiconductor device structure | 台湾积体电路制造股份有限公司 | 2025-03-21 | — | — | CN | disclosed |
| CN-113284901-B | Semiconductor device with programmable antifuse feature and method of making the same | 南亚科技股份有限公司 | 2024-11-26 | — | — | CN | disclosed |
| WO-2024228369-A1 | OPTICAL ELEMENT, METHOD FOR MANUFACTURING OPTICAL ELEMENT, MATERIAL SET, OPTICAL APPARATUS, AND SYSTEM | ソニーグループ株式会社 | 2024-11-07 | — | — | WO | disclosed |
| CN-113314525-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-10-18 | — | — | CN | disclosed |
| CN-113257813-B | Semiconductor device with graded porous dielectric structure | 南亚科技股份有限公司 | 2024-05-24 | — | — | CN | disclosed |
| CN-116648063-A | Method for manufacturing semiconductor element | 南亚科技股份有限公司 | 2023-08-25 | — | — | CN | disclosed |
| CN-116646354-A | Semiconductor device with a semiconductor element having a plurality of electrodes | 南亚科技股份有限公司 | 2023-08-25 | — | — | CN | disclosed |
| CN-102237312-B | Method for manufacturing semiconductor element | TAIWAN SEMICONDUCTOR MFG | 2013-11-06 | — | — | CN | disclosed |
| CN-102386234-B | Semiconductor device and method for forming the same | TAIWAN SEMICONDUCTOR MFG | 2013-10-02 | — | — | CN | disclosed |
| CN-103137645-A | Semiconductor memory device having three-dimensionally arranged resistive memory cells | SAMSUNG ELECTRONICS CO LTD | 2013-06-05 | — | — | CN | disclosed |
| CN-102386234-A | Semiconductor device and method for forming the same | TAIWAN SEMICONDUCTOR MFG | 2012-03-21 | — | — | CN | disclosed |
| CN-102386082-A | Method for forming semiconductor element | TAIWAN SEMICONDUCTOR MFG | 2012-03-21 | — | — | CN | disclosed |
| CN-102237312-A | Method for manufacturing semiconductor element | TAIWAN SEMICONDUCTOR MFG | 2011-11-09 | — | — | CN | disclosed |
| US-8037674-B2 | System and method of NOx abatement | DELPHI TECHNOLOGIES, INC. (US) | 2011-10-18 | — | — | US | disclosed |
| CN-101321584-A | Stabilized flash calcined gibbsite as a catalyst support | BASF CATALYSTS LLC (US) | 2008-12-10 | — | — | CN | disclosed |
| US-20060213187-A1 | System and method of nox abatement | DELPHI TECHNOLOGIES, INC. | 2006-09-28 | — | — | US | disclosed |