SCHEMBL2523917

SCHEMBL2523917

CC(C(=O)O)c1ccc(O)cc1.CCC(C(=O)O)c1ccc(O)cc1

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 5/20 0.53
HSD17B10 Q99714 1/20 0.53
PTGS2 P35354 7/20 0.50
AKR1C3 P42330 7/20 0.50
PTGS1 P23219 6/20 0.50
AKR1C2 P52895 6/20 0.50
CYP2C9 P11712 5/20 0.50
ESR1 P03372 3/20 0.50
CXCR1 P25024 2/20 0.50
CXCR2 P25025 2/20 0.50
ALB P02768 1/20 0.50
ALOX5 P09917 1/20 0.50
RARB P10826 1/20 0.50
ADRB3 P13945 1/20 0.50
NFKB1 P19838 1/20 0.50
HTR2A P28223 1/20 0.50
NR1I3 Q14994 1/20 0.50
SLC22A6 Q4U2R8 1/20 0.50
CXCL8 P10145 1/20 0.50
TSHR P16473 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL819392 0.91 LMNA (0.61) LMNAHSD17B10PTGS2AKR1C3PTGS1
SCHEMBL7431730 0.86 PTGS2 (0.56) LMNAHSD17B10PTGS2AKR1C3PTGS1
Butane SCHEMBL27363299 0.85 PTGS2 (0.56) LMNAPTGS2AKR1C3PTGS1AKR1C2
SCHEMBL1345582 0.85 PTGS2 (0.63) LMNAPTGS2AKR1C3PTGS1AKR1C2
SCHEMBL892055 0.85 PTGS2 (0.63) LMNAPTGS2AKR1C3PTGS1AKR1C2
SCHEMBL288003 0.85 PTGS2 (0.63) LMNAPTGS2AKR1C3PTGS1AKR1C2
Hydrochloric Acid SCHEMBL28716582 0.83 PTGS2 (0.61) LMNAPTGS2AKR1C3PTGS1AKR1C2
SCHEMBL9232479 0.83 PTGS2 (0.61) LMNAPTGS2AKR1C3PTGS1AKR1C2
SCHEMBL9232475 0.83 PTGS2 (0.61) LMNAPTGS2AKR1C3PTGS1AKR1C2
SCHEMBL9234136 0.83 PTGS2 (0.61) LMNAPTGS2AKR1C3PTGS1AKR1C2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2618216-B1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD OF CREATING RESIST PATTERN, AND ELECTRONIC COMPONENT HITACHI CHEMICAL CO LTD (JP) 2019-05-29 EP disclosed
US-9786576-B2 Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device HITACHI CHEMICAL COMPANY, LTD (JP) 2017-10-10 US disclosed
US-8836089-B2 Positive photosensitive resin composition, method of creating resist pattern, and electronic component HITACHI CHEMICAL COMPANY, LTD. (JP) 2014-09-16 US disclosed
EP-2221666-B1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, AND SEMICONDUCTOR DEVICE HITACHI CHEMICAL CO LTD (JP) 2013-09-18 EP disclosed
EP-2618216-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD OF CREATING RESIST PATTERN, AND ELECTRONIC COMPONENT Hitachi Chemical Co., Ltd. (JP) 2013-07-24 EP disclosed
US-20130168859-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD OF CREATING RESIST PATTERN, AND ELECTRONIC COMPONENT RESONAC CORPORATION (JP) 2013-07-04 US disclosed
US-20110250396-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE RESONAC CORPORATION (JP) 2011-10-13 US disclosed
EP-2221666-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Hitachi Chemical Company, Ltd. (JP) 2010-08-25 EP disclosed