⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Bromide SCHEMBL16193767 | 0.94 | — | — | |
| Hydrochloric Acid SCHEMBL1036860 | 0.94 | — | — | |
| SCHEMBL3645072 | 0.78 | ALDH1A1 (0.36) | — | |
| SCHEMBL17138420 | 0.71 | — | — | |
| SCHEMBL2531985 | 0.62 | — | — | |
| SCHEMBL263958 | 0.62 | — | — | |
| SCHEMBL79834 | 0.59 | — | — | |
| SCHEMBL2530385 | 0.59 | — | — | |
| SCHEMBL2531980 | 0.59 | — | — | |
| SCHEMBL16927200 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1465 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117623327-B | Ni modified micropore-mesoporous molecular sieve and preparation method and application thereof | 万华化学集团股份有限公司 | 2026-05-19 | — | — | CN | claimed |
| EP-4686724-A1 | METHOD FOR THE DEUTERATION OF SILANES AND PINACOLBORANE | Consejo Superior De Investigaciones Científicas (CSIC) (ES) | 2026-02-04 | — | — | EP | claimed |
| WO-2025217341-A1 | LOW TEMPERATURE TRICHLOROSILANE HYDROGENATION | AGC CARBON INC. (US) | 2025-10-16 | — | — | WO | claimed |
| US-20250313482-A1 | LOW TEMPERATURE TRICHLOROSILANE HYDROGENATION | AGC CARBON INC. (US) | 2025-10-09 | — | — | US | claimed |
| CN-111095656-B | Lithium secondary battery | 三星SDI株式会社 | 2024-03-22 | — | — | CN | claimed |
| CN-117623327-A | Ni modified micropore-mesoporous molecular sieve and preparation method and application thereof | 万华化学集团股份有限公司 | 2024-03-01 | — | — | CN | claimed |
| CN-115093450-B | Compound and application thereof in synthesis of immunoadjuvant KRN7000 | 上海安奕康生物科技有限公司 | 2024-02-09 | — | — | CN | claimed |
| CN-117377716-A | Organosilicon pressure-sensitive adhesive and method for preparing same | 迈图高新材料公司 | 2024-01-09 | — | — | CN | claimed |
| CN-117069782-A | Preparation method of general key intermediate of glycoside compound with alpha-stereoselectivity | 上海医药工业研究院有限公司 | 2023-11-17 | — | — | CN | claimed |
| US-11691883-B2 | Synthesis of trichlorosilane from tetrachlorosilane and hydridosilanes | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2023-07-04 | — | — | US | claimed |
| US-5061514-A | Chemical vapor deposition (CVD) process for plasma depositing silicon carbide films onto a substrate | OLIN CORPORATION (US) | 1991-10-29 | — | — | US | claimed |
| US-5053255-A | Chemical vapor deposition (CVD) process for the thermally depositing silicon carbide films onto a substrate | OLIN CORPORATION (US) | 1991-10-01 | — | — | US | claimed |
| EP-0417170-A4 | PROCESS FOR PLASMA DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE | — | 1991-06-26 | — | — | EP | claimed |
| EP-0417202-A4 | PROCESS FOR THERMALLY DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE | — | 1991-05-22 | — | — | EP | claimed |
| EP-0417202-A1 | PROCESS FOR THERMALLY DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE. | OLIN CORP (US) | 1991-03-20 | — | — | EP | claimed |
| EP-0417170-A1 | PROCESS FOR PLASMA DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE. | OLIN CORP (US) | 1991-03-20 | — | — | EP | claimed |
| WO-1989012507-A1 | PROCESS FOR PLASMA DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE | OLIN CORPORATION (US) | 1989-12-28 | — | — | WO | claimed |
| WO-1989011920-A1 | PROCESS FOR THERMALLY DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE | OLIN CORPORATION (US) | 1989-12-14 | — | — | WO | claimed |
| US-4877641-A | Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate | OLIN CORPORATION (US) | 1989-10-31 | — | — | US | claimed |
| US-4877651-A | Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate | OLIN CORPORATION (US) | 1989-10-31 | — | — | US | claimed |