SCHEMBL25423525

SCHEMBL25423525

Oc1ccc(-c2c(O)c(F)c(F)c(O)c2F)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ SENP1 Q9P0U3 2/20 0.48
▸ ESR1 P03372 3/20 0.46
▸ ESR2 Q92731 3/20 0.46
▸ MMP3 P08254 1/20 0.39
▸ BCL2L1 Q07817 1/20 0.39
▸ PREP P48147 2/20 0.38
▸ CELA1 Q9UNI1 1/20 0.38
▸ MEN1 O00255 2/20 0.38
▸ NPC1 O15118 2/20 0.38
▸ MAPT P10636 2/20 0.38
▸ NFKB1 P19838 2/20 0.38
▸ RAB9A P51151 2/20 0.38
▸ KMT2A Q03164 2/20 0.38
▸ KDM4E B2RXH2 1/20 0.38
▸ CA12 O43570 1/20 0.38
▸ GMNN O75496 1/20 0.38
▸ ALDH1A1 P00352 1/20 0.38
▸ CA1 P00915 1/20 0.38
▸ CA2 P00918 1/20 0.38
▸ LMNA P02545 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25421021 0.88 SENP1 (0.52) SENP1ESR1ESR2MMP3BCL2L1
SCHEMBL4451076 0.88 SENP1 (0.50) SENP1ESR1ESR2MMP3BCL2L1
SCHEMBL29006465 0.86 SENP1 (0.54) SENP1ESR1ESR2MMP3BCL2L1
SCHEMBL25419910 0.86 SENP1 (0.48) SENP1ESR1ESR2MMP3BCL2L1
SCHEMBL29006507 0.84 SENP1 (0.52) SENP1ESR1ESR2MMP3BCL2L1
SCHEMBL11694547 0.77 ESR1 (0.53) SENP1ESR1ESR2MMP3BCL2L1
SCHEMBL25422121 0.76 NQO1 (0.48) ESR1ESR2NPC1RAB9ACA12
SCHEMBL25421169 0.76 APP (0.52) MAPTMGAMGAASIMGAM2
SCHEMBL25421073 0.74 HSD17B1 (0.50) ESR1ESR2CA12ALDH1A1CA2
SCHEMBL25421710 0.73 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240122065-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN TOSOH CORPORATION (JP) 2024-04-11 — — US disclosed
EP-4198163-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN Tosoh Corporation (JP) 2023-06-21 — — EP disclosed
CN-116157382-A Material for metal patterning, amine compound, electronic device, and method for forming metal pattern 东曹株式会社 2023-05-23 — — CN disclosed
Send feedback