SCHEMBL25476582

SCHEMBL25476582

BCc1cc(CB)c(OC(=O)c2ccc(C(=O)OCCS(=O)(=O)O)cc2)c(CB)c1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ STS P08842 9/20 0.36
▸ ESR1 P03372 3/20 0.33
▸ TDP1 Q9NUW8 2/20 0.33
▸ ALDH1A1 P00352 2/20 0.33
▸ TSHR P16473 2/20 0.33
▸ ESR2 Q92731 1/20 0.33
▸ CHRM1 P11229 1/20 0.33
▸ SLC6A2 P23975 1/20 0.33
▸ KDR P35968 1/20 0.33
▸ NPC1 O15118 1/20 0.32
▸ RAB9A P51151 1/20 0.32
▸ KMT2A Q03164 2/20 0.32
▸ CA1 P00915 2/20 0.32
▸ CA2 P00918 2/20 0.32
▸ LMNA P02545 1/20 0.31
▸ CYP1A2 P05177 1/20 0.31
▸ CYP2D6 P10635 1/20 0.31
▸ MAPK1 P28482 1/20 0.31
▸ CYP2C19 P33261 1/20 0.31
▸ NR1H2 P55055 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25476584 0.93 HRH3 (0.34) STSLMNA
SCHEMBL25476577 0.85 ALDH1A1 (0.38) TDP1ALDH1A1TSHRNPC1RAB9A
SCHEMBL25527909 0.82 MEN1 (0.42) STSESR1TDP1ALDH1A1TSHR
SCHEMBL25476358 0.81 STS (0.36) STSALDH1A1NPC1RAB9AKMT2A
SCHEMBL25476579 0.81 KDM4E (0.38) TDP1
SCHEMBL25527947 0.80 CA1 (0.31) CA1CA2
SCHEMBL25737055 0.80 SERPINE1 (0.40) ESR1TDP1
SCHEMBL25476547 0.80 — —
SCHEMBL25476554 0.78 — —
SCHEMBL27600533 0.78 TSHR (0.48) STSESR1TDP1ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 — — US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 — — US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 — — US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 — — US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 — — US disclosed
US-11720021-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-11720020-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-11720018-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-20230236503-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-27 — — US disclosed
US-11709427-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-25 — — US disclosed
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-18 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20230152696-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 — — US disclosed
US-20230152698-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 — — US disclosed
US-20230129578-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-27 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709427-B2 Positive resist composition and pattern forming process EWSR1, PARG, VIM STS 4538/4885ESR1 653/4885TDP1 4093/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 STS 246/4885ESR1 1070/4885TDP1 3213/4885
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process NAF1, PFN1, COL1A1 STS 4649/4885ESR1 2778/4885TDP1 1284/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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