Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.44 |
| ▸ | TSHR | P16473 | 8/20 | 0.42 |
| ▸ | TDP1 | Q9NUW8 | 4/20 | 0.41 |
| ▸ | L3MBTL1 | Q9Y468 | 3/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 4/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 3/20 | 0.41 |
| ▸ | TP53 | P04637 | 2/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.40 |
| ▸ | SCN1A | P35498 | 2/20 | 0.39 |
| ▸ | SCN2A | Q99250 | 2/20 | 0.39 |
| ▸ | SCN3A | Q9NY46 | 2/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 4/20 | 0.37 |
| ▸ | NPC1 | O15118 | 3/20 | 0.37 |
| ▸ | HPGD | P15428 | 2/20 | 0.37 |
| ▸ | RAB9A | P51151 | 2/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.37 |
| ▸ | GLA | P06280 | 1/20 | 0.37 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL26834654 | 0.92 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1L3MBTL1CYP3A4 | |
| SCHEMBL25737068 | 0.87 | ALDH1A1 (0.37) | ALDH1A1TSHRTDP1L3MBTL1CYP3A4 | |
| SCHEMBL25527920 | 0.82 | SERPINE1 (0.33) | ALDH1A1TSHRTDP1L3MBTL1 | |
| SCHEMBL25737056 | 0.82 | SERPINE1 (0.33) | ALDH1A1TSHRTDP1L3MBTL1CYP3A4 | |
| SCHEMBL25527941 | 0.81 | SERPINE1 (0.36) | ALDH1A1TSHR | |
| SCHEMBL25476577 | 0.81 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1L3MBTL1CYP3A4 | |
| SCHEMBL10172877 | 0.80 | TDP1 (0.67) | ALDH1A1TSHRTDP1L3MBTL1CYP3A4 | |
| SCHEMBL10067097 | 0.80 | ALDH1A1 (0.56) | ALDH1A1TSHRTDP1L3MBTL1CYP3A4 | |
| SCHEMBL25737142 | 0.79 | ALDH1A1 (0.37) | ALDH1A1TSHRTDP1L3MBTL1CYP3A4 | |
| SCHEMBL25527940 | 0.78 | ALDH1A1 (0.37) | ALDH1A1TSHRTDP1L3MBTL1CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-11914291-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027903-A1 | Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11860540-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-02 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-11835859-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11835860-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829067-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11720021-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-08 | — | — | US | disclosed |
| US-11720020-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-08 | — | — | US | disclosed |
| US-11720018-B2 | Chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-08 | — | — | US | disclosed |
| US-20230236503-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-27 | — | — | US | disclosed |
| US-11709427-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11703760-B2 | Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230161252-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230152696-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-18 | — | — | US | disclosed |
| US-20230152698-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-18 | — | — | US | disclosed |
| US-20230129578-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-04-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709427-B2 | Positive resist composition and pattern forming process | EWSR1, PARG, VIM | ALDH1A1 3639/4885TSHR 4671/4885TDP1 4093/4885 |
| US-20240027903-A1 | Resist Material And Patterning Process | LBR, HNRNPU, EWSR1 | ALDH1A1 4741/4885TSHR 2364/4885TDP1 3213/4885 |
| US-11703760-B2 | Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process | NAF1, PFN1, COL1A1 | ALDH1A1 640/4885TSHR 4479/4885TDP1 1284/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.