SCHEMBL25528186

SCHEMBL25528186

BCc1cc(CB)c(CB)c(C(=O)Oc2ccc(C(=O)OCCS(=O)(=O)O)c(OC(=O)c3cc(CB)cc(CB)c3CB)c2)c1

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.32
KDM4E B2RXH2 1/20 0.30
PTGS2 P35354 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25476371 0.95
SCHEMBL25528188 0.88
SCHEMBL25476358 0.87 STS (0.36) KMT2AKDM4E
SCHEMBL25737069 0.86
SCHEMBL25476365 0.84 POLB (0.30) KMT2A
SCHEMBL25476375 0.83
SCHEMBL25476377 0.83 SERPINE1 (0.31)
SCHEMBL25476367 0.82 KMT2A (0.34) KMT2A
SCHEMBL27048404 0.79
SCHEMBL25947702 0.79

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 US disclosed
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-23 US disclosed
US-11720021-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 US disclosed
US-11720019-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 US disclosed
US-11720018-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 US disclosed
US-20230236503-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-27 US disclosed
US-11709427-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-25 US disclosed
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-18 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230152698-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20230152696-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20230129578-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11720019-B2 Resist composition and pattern forming process SLC11A2, ABCC1, SFPQ KMT2A 2458/4885KDM4E 2900/4885PTGS2 3458/4885
US-11709427-B2 Positive resist composition and pattern forming process EWSR1, PARG, VIM KMT2A 1022/4885KDM4E 1171/4885PTGS2 4007/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 KMT2A 882/4885KDM4E 778/4885PTGS2 2796/4885
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process NAF1, PFN1, COL1A1 KMT2A 1639/4885KDM4E 3021/4885PTGS2 2748/4885
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process NAF1, RALA, RSU1 KMT2A 3299/4885KDM4E 3224/4885PTGS2 3425/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.