SCHEMBL25564192

SCHEMBL25564192

CC(=O)OC1(c2ccc3cc4ccc(F)cc4cc3c2)CCCC1

nearest known ligand 0.45

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
SLC6A3 Q01959 4/20 0.45
SLC6A4 P31645 3/20 0.45
DRD2 P14416 1/20 0.39
DRD4 P21917 1/20 0.39
DRD3 P35462 1/20 0.39
HSD11B1 P28845 3/20 0.35
HDAC4 P56524 2/20 0.34
SMN1; SMN2 Q16637 2/20 0.33
MAPT P10636 1/20 0.33
CYSLTR2 Q9NS75 2/20 0.32
CYSLTR1 Q9Y271 2/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2A6 P11509 1/20 0.32
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
ALDH1A1 P00352 1/20 0.31
GAA P10253 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25564296 0.99 SLC6A3 (0.47) SLC6A3SLC6A4DRD2DRD4DRD3
SCHEMBL25564169 0.97 SLC6A3 (0.47) SLC6A3SLC6A4DRD2DRD4DRD3
SCHEMBL25564167 0.96 SLC6A3 (0.43) SLC6A3SLC6A4DRD2DRD4DRD3
SCHEMBL25564270 0.96 SLC6A3 (0.49) SLC6A3SLC6A4DRD2DRD4DRD3
SCHEMBL25564269 0.95 SLC6A3 (0.45) SLC6A3SLC6A4DRD2DRD4DRD3
SCHEMBL25564179 0.89 DRD2 (0.35) SLC6A3SLC6A4DRD2DRD4DRD3
SCHEMBL25564281 0.88 SLC6A3 (0.37) SLC6A3SLC6A4DRD2DRD4DRD3
SCHEMBL25564671 0.84 SLC6A3 (0.43) SLC6A3SLC6A4DRD2DRD4DRD3
SCHEMBL25574909 0.83 SLC6A3 (0.44) SLC6A3SLC6A4HSD11B1HDAC4CYSLTR2
SCHEMBL25564130 0.82 DRD2 (0.50) SLC6A3SLC6A4DRD2DRD4DRD3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed