SCHEMBL25564264

SCHEMBL25564264

CC(=O)OC1(c2ccc(OC(F)(F)F)c(OC(F)(F)F)c2)CCCCC1

nearest known ligand 0.40

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.40
TSHR P16473 1/20 0.39
CASP1 P29466 1/20 0.39
KCNN4 O15554 2/20 0.39
SLC6A4 P31645 3/20 0.36
SLC6A3 Q01959 3/20 0.36
SLC6A2 P23975 1/20 0.36
CYP3A4 P08684 1/20 0.35
CYP2C19 P33261 1/20 0.35
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
PDE2A O00408 2/20 0.34
MAPT P10636 1/20 0.34
SLC6A9 P48067 1/20 0.34
EPHX2 P34913 1/20 0.33
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25564156 0.99 TSHR (0.40) LMNATSHRCASP1KCNN4SLC6A4
SCHEMBL25564249 0.82 SLC6A4 (0.51) SLC6A4SLC6A3SLC6A2CYP3A4CYP2C19
SCHEMBL25564148 0.81 SLC6A4 (0.49) SLC6A4SLC6A3SLC6A2CYP3A4CYP2C19
SCHEMBL25564266 0.81 HDAC3 (0.43) SLC6A4SLC6A3SLC6A2SLC6A9
SCHEMBL25564261 0.80 SLC6A4 (0.39) SLC6A4SLC6A3SLC6A2CYP3A4CYP2C19
SCHEMBL25564161 0.79 HDAC3 (0.44) SLC6A2SLC6A9EPHX2
SCHEMBL25564257 0.78 KCNN4 (0.34) LMNAKCNN4SLC6A4SLC6A3SLC6A2
SCHEMBL25564153 0.78 SLC6A4 (0.37) SLC6A4SLC6A3SLC6A2CYP3A4CYP2C19
SCHEMBL25564315 0.76 SLC6A3 (0.46) LMNASLC6A4SLC6A3SLC6A2
SCHEMBL25564245 0.76 SLC6A3 (0.46) TSHRSLC6A4SLC6A3SLC6A2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed