SCHEMBL25615569

SCHEMBL25615569

O/C(=C\C(O)c1cc(C(F)(F)F)cc(C(F)(F)F)c1)c1cc(C(F)(F)F)cc(C(F)(F)F)c1

nearest known ligand 0.42

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CES2 O00748 3/20 0.42
TACR1 P25103 8/20 0.38
IDO1 P14902 1/20 0.36
TDO2 P48775 1/20 0.36
GAA P10253 1/20 0.36
RXRA P19793 1/20 0.35
RXRB P28702 1/20 0.35
RXRG P48443 1/20 0.35
PNMT P11086 1/20 0.33
CACNA1F O60840 1/20 0.33
CACNA1D Q01668 1/20 0.33
CACNA1S Q13698 1/20 0.33
CACNA1C Q13936 1/20 0.33
P2RX1 P51575 1/20 0.33
MAPT P10636 2/20 0.32
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
CES1 P23141 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25615978 0.77 CES2 (0.41) CES2TACR1IDO1GAARXRA
SCHEMBL2097828 0.72 CES2 (0.52) CES2TACR1GAARXRARXRB
SCHEMBL15917914 0.70 CES2 (0.48) CES2TACR1IDO1TDO2GAA
SCHEMBL27977206 0.70 CES2 (0.48) CES2TACR1IDO1TDO2GAA
SCHEMBL23603132 0.69 CES2 (0.46) CES2TACR1IDO1TDO2RXRA
SCHEMBL4145700 0.69 CES2 (0.46) CES2TACR1IDO1TDO2RXRA
SCHEMBL14471508 0.67 CES2 (0.61) CES2TACR1GAARXRARXRB
SCHEMBL26184636 0.67 CES2 (0.41) CES2TACR1IDO1TDO2RXRA
SCHEMBL265045 0.66 PDE2A (0.46) CES2TACR1IDO1TDO2PNMT
SCHEMBL18949787 0.66 PNMT (0.44) CES2TACR1IDO1TDO2GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4199131-A1 A CE(IV) METAL COMPLEX, AN ORGANIC ELECTRONIC DEVICE COMPRISING AN ANODE LAYER, A CATHODE LAYER AND A CHARGE GENERATION LAYER, WHEREIN THE CHARGE GENERATION LAYER COMPRISES A P-TYPE CHARGE GENERATION LAYER THAT COMPRISES THE CE(IV) METAL COMPLEX AND A N-TYPE CHARGE GENERATION LAYER Novaled GmbH (DE) 2023-06-21 EP disclosed