SCHEMBL25629348

SCHEMBL25629348

CCC1(OC(=O)COc2c(C)cc([SH](c3ccccc3)c3ccccc3)cc2C)CCCCC1

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.39
KMT2A Q03164 3/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
MMP1 P03956 1/20 0.32
MMP9 P14780 1/20 0.32
MMP8 P22894 1/20 0.32
MEN1 O00255 2/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
NPC1 O15118 1/20 0.32
ALDH1A1 P00352 1/20 0.32
RAB9A P51151 1/20 0.32
ATM Q13315 1/20 0.32
HDAC4 P56524 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25629364 0.99 THRB (0.38) THRBKMT2AL3MBTL1MMP1MMP9
SCHEMBL15034667 0.86 THRB (0.51) THRBKMT2AL3MBTL1MEN1SMN1; SMN2
SCHEMBL25919309 0.85 PPARD (0.38) THRB
SCHEMBL25629365 0.85 THRB (0.39) THRBKMT2AL3MBTL1MMP1MMP9
SCHEMBL98387 0.83 THRB (0.36) THRBKMT2AL3MBTL1MMP1MMP9
SCHEMBL23600702 0.82 THRB (0.35) THRBKMT2AL3MBTL1MMP1MMP9
SCHEMBL98384 0.82 THRB (0.35) THRBKMT2AL3MBTL1MMP1MMP9
SCHEMBL25658005 0.82 ATM (0.39) THRBKMT2AL3MBTL1MEN1SMN1; SMN2
Hydrochloric Acid SCHEMBL31108771 0.81 THRB (0.34) THRBKMT2AL3MBTL1MMP1MMP9
Bromide SCHEMBL31564953 0.81 THRB (0.34) THRBKMT2AL3MBTL1MMP1MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024127977-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-20 WO disclosed
WO-2024122425-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-13 WO disclosed
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
WO-2023223865-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2023-11-23 WO disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
WO-2023195407-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-10-12 WO disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-20230314945-A1 NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-05 US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-20230205084-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-29 US disclosed
WO-2023112746-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-06-22 WO disclosed
WO-2023112893-A1 RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD 東京応化工業株式会社 2023-06-22 WO disclosed
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-06 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-11650497-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-16 US disclosed
US-11644751-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-09 US disclosed
WO-2023068251-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2023-04-27 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11693313-B2 Resist composition and method of forming resist pattern C1R, C1S, C9 THRB 1707/4885KMT2A 4179/4885L3MBTL1 2526/4885
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound RB1, RBBP5, RRM2B THRB 2454/4885KMT2A 1263/4885L3MBTL1 4300/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 THRB 4383/4885KMT2A 2337/4885L3MBTL1 2206/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.