SCHEMBL2582629

SCHEMBL2582629

C=CC(=O)O[Si](Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 4/20 0.49
TGM2 P21980 2/20 0.40
AKT1 P31749 1/20 0.39
ALOX15 P16050 2/20 0.34
SMN1; SMN2 Q16637 3/20 0.34
KDM4E B2RXH2 2/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
PDE6D O43924 1/20 0.34
ALDH1A1 P00352 2/20 0.33
EGFR P00533 1/20 0.33
TP53 P04637 1/20 0.33
CYP3A4 P08684 1/20 0.33
MAPT P10636 1/20 0.33
PKM P14618 1/20 0.33
HPGD P15428 1/20 0.33
ALOX12 P18054 1/20 0.33
JAK1 P23458 1/20 0.33
MAPK1 P28482 1/20 0.33
HSD17B10 Q99714 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1784170 0.78 THRB (0.54) THRBTGM2AKT1ALOX15SMN1; SMN2
SCHEMBL28916 0.76 THRB (0.58) THRBTGM2AKT1ALOX15SMN1; SMN2
Hydrogen Peroxide SCHEMBL28479331 0.76 THRB (0.58) THRBTGM2AKT1ALOX15SMN1; SMN2
SCHEMBL231331 0.75 THRB (0.57) THRBTGM2SMN1; SMN2KDM4EMEN1
SCHEMBL2584263 0.74 ELANE (0.47) ALOX15KDM4EKMT2AALDH1A1MAPT
SCHEMBL25263655 0.74 MTNR1A (0.44) ALOX15KDM4EALDH1A1CYP3A4MAPT
SCHEMBL11576296 0.74 THRB (0.56) THRBTGM2AKT1ALOX15SMN1; SMN2
SCHEMBL10479978 0.74 THRB (0.56) THRBTGM2AKT1ALOX15SMN1; SMN2
Lithium SCHEMBL30641493 0.74 THRB (0.56) THRBTGM2AKT1ALOX15SMN1; SMN2
SCHEMBL28429842 0.74 THRB (0.56) THRBTGM2AKT1ALOX15SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-20120128891-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-24 US disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed