SCHEMBL2583026

SCHEMBL2583026

C=CC(=O)O[Si](Cl)(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
THRB P10828 4/20 0.41
AKT1 P31749 1/20 0.39
PDE6D O43924 1/20 0.36
TGM2 P21980 3/20 0.36
ALDH1A1 P00352 2/20 0.33
CYP3A4 P08684 2/20 0.33
CYP2C9 P11712 1/20 0.33
CYP2C19 P33261 1/20 0.33
HCAR2 Q8TDS4 2/20 0.33
THRA P10827 1/20 0.32
GSR P00390 1/20 0.32
MAPT P10636 1/20 0.32
GSTO1 P78417 1/20 0.31
LMNA P02545 1/20 0.31
EGFR P00533 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2580887 0.85 THRB (0.41) THRBAKT1PDE6DTGM2ALDH1A1
SCHEMBL21925797 0.81 THRB (0.43) THRBAKT1PDE6DTGM2ALDH1A1
SCHEMBL5142114 0.81 THRB (0.43) THRBAKT1PDE6DTGM2ALDH1A1
SCHEMBL28959321 0.81 THRB (0.43) THRBAKT1PDE6DTGM2ALDH1A1
SCHEMBL9411666 0.78 THRB (0.41) THRBAKT1PDE6DTGM2ALDH1A1
SCHEMBL10890696 0.78 THRB (0.41) THRBAKT1PDE6DTGM2ALDH1A1
SCHEMBL2581351 0.78 THRB (0.41) THRBAKT1PDE6DTGM2ALDH1A1
SCHEMBL2577761 0.75 THRB (0.39) THRBAKT1TGM2ALDH1A1CYP3A4
SCHEMBL21496260 0.75 THRB (0.39) THRBAKT1TGM2ALDH1A1CYP3A4
SCHEMBL7055125 0.75 ALDH1A1 (0.44) ALDH1A1CYP3A4MAPTLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
CN-101322074-B Silicon-containing resist underlying layer film forming composition for formation of photocrosslinking cured resist underlying layer film NISSAN CHEMICAL IND LTD 2013-01-23 CN disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-20120128891-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-24 US disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
CN-101322074-A Silicon-containing resist underlying layer film forming composition for formation of photocrosslinking cured resist underlying layer film NISSAN CHEMICAL IND LTD (JP) 2008-12-10 CN disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed