Naphthoquinone

Naphthoquinone

SCHEMBL2583580

O=C1C=CC(=O)c2ccccc21.[N-]=[N+]=NOS(=O)(=O)N=[N+]=[N-]

nearest known ligand 0.44

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 3/20 0.44
CDC25B P30305 2/20 0.44
MAOA P21397 1/20 0.44
MAOB P27338 1/20 0.44
AKT1 P31749 1/20 0.44
SNCA P37840 1/20 0.44
MAP2K1 Q02750 1/20 0.44
PIN1 Q13526 1/20 0.44
EHMT2 Q96KQ7 1/20 0.44
NSD1 Q96L73 1/20 0.44
EHMT1 Q9H9B1 1/20 0.44
ALDH1A1 P00352 4/20 0.33
MAPT P10636 4/20 0.33
MEN1 O00255 3/20 0.33
KMT2A Q03164 3/20 0.33
HTT P42858 3/20 0.33
MCL1 Q07820 2/20 0.33
TDP1 Q9NUW8 2/20 0.33
THRB P10828 2/20 0.33
PTPN1 P18031 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Naphthoquinone SCHEMBL28001456 0.98 IDO1 (0.42) IDO1CDC25BMAOAMAOBAKT1
Naphthoquinone SCHEMBL6327368 0.98 IDO1 (0.42) IDO1CDC25BMAOAMAOBAKT1
Anthraquinone SCHEMBL27945171 0.89 CDC25B (0.41) IDO1CDC25BMAOAMAOBALDH1A1
1,2-Naphthoquinone SCHEMBL5447857 0.87 PTPRC (0.54) IDO1CDC25BMAOAMAOBAKT1
1,2-Naphthoquinone SCHEMBL8376775 0.86 PTPRC (0.53) IDO1CDC25BMAOAMAOBAKT1
Naphthoquinone SCHEMBL10743205 0.85 CDC25B (0.48) IDO1CDC25BMAOAMAOBAKT1
SCHEMBL27601001 0.80
Naphthoquinone SCHEMBL106247 0.80 IDO1 (0.54) IDO1CDC25BMAOAMAOBAKT1
Benzoquinone SCHEMBL10486821 0.80 ALDH1A1 (0.31) MAOAMAOBALDH1A1TDP1BCHE
Benzoquinone SCHEMBL6332237 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1782878-B Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES 2011-08-10 CN claimed
CN-1275094-C Positive-type photosensitive polyimide precursor composition TORAY INDUSTRIES (JP) 2006-09-13 CN claimed
CN-1782878-A Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES (JP) 2006-06-07 CN claimed
CN-1310809-A Positive-type photosensitive polyimide precursor composition TORAY INDUSTRIES (JP) 2001-08-29 CN claimed
US-4791046-A Process for forming mask patterns of positive type resist material with trimethylsilynitrile OKI ELECTRIC INDUSTRY CO., LTD. (JP) 1988-12-13 US claimed
US-4686280-A Positive type resist material with trimethylsilylnitrile OKI ELECTRIC INDUSTRY CO., LTD. (JP) 1987-08-11 US claimed
JP-2001855-A None JP disclosed
US-20240118616-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND DISPLAY DEVICE USING THE SAME DONGJIN SEMICHEM CO., LTD. (KR) 2024-04-11 US disclosed
CN-107703717-B Positive photosensitive resin composition, method for producing metal wiring, and laminate 东京应化工业株式会社 2023-01-24 CN disclosed
CN-107703685-B Laminate and method for producing laminate 东京应化工业株式会社 2022-03-18 CN disclosed
CN-107703658-B Method for manufacturing substrate 东京应化工业株式会社 2022-02-25 CN disclosed
CN-105706000-B Positive type photosensitive organic compound, used it film manufacturing method and electronic component 中央硝子株式会社 2019-09-27 CN disclosed
CN-110073476-A The thin film transistor base plate and its manufacturing method for having protective film 默克专利有限公司 2019-07-30 CN disclosed
CN-1155100-A Photosensitive composition and photosensitive lithographic printing plate using the same KONISHIROKU PHOTO IND (JP) 1997-07-23 CN disclosed
EP-0391365-A1 Process for treating metal surface FUJI PHOTO FILM CO., LTD. (JP) 1990-10-10 EP disclosed
US-4906549-A Positive-working photoresist composition with quinone diazide sulfonic acid ester and novolac made from m-cresol, p-cresol and aliphatic phenol with 2-6 carbon atoms TOKYO OHKA KOGYO CO., LTD. (JP) 1990-03-06 US disclosed
JP-H021855-A PHOTOSENSITIVE PLANOGRAPHIC PLATE KONICA CORP 1990-01-08 JP disclosed
US-4804612-A PLASMA DRY-ETCHING RESISTANCE TOKYO OHKA KOGYO CO., LTD. (JP) 1989-02-14 US disclosed
US-4791046-A Process for forming mask patterns of positive type resist material with trimethylsilynitrile OKI ELECTRIC INDUSTRY CO., LTD. (JP) 1988-12-13 US disclosed
US-4686280-A Positive type resist material with trimethylsilylnitrile OKI ELECTRIC INDUSTRY CO., LTD. (JP) 1987-08-11 US disclosed