Known targets — ChEMBL curated mechanism
GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHMGCRMMP1MMP13MMP7MMP8PTGS1PTGS2ileSpolrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Fluoride Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride Ion SCHEMBL9236369 | 1.00 | — | — | |
| Fluoride SCHEMBL9788490 | 0.87 | — | — | |
| Fluoride SCHEMBL27283531 | 0.87 | — | — | |
| SCHEMBL5635670 | 0.82 | — | — | |
| Fluoride Ion SCHEMBL10339061 | 0.82 | CA4 (0.50) | — | |
| Fluoride Ion SCHEMBL29859 | 0.82 | — | — | |
| SCHEMBL49600 | 0.82 | — | — | |
| SCHEMBL49599 | 0.82 | — | — | |
| SCHEMBL11857510 | 0.82 | — | — | |
| SCHEMBL14739144 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| JP-62061344-A | — | — | None | — | — | JP | disclosed |
| US-9026957-B2 | Method of defining an intensity selective exposure photomask | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2015-05-05 | — | — | US | disclosed |
| US-20140170537-A1 | METHOD OF DEFINING AN INTENSITY SELECTIVE EXPOSURE PHOTOMASK | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-06-19 | — | — | US | disclosed |
| US-8673520-B2 | Intensity selective exposure photomask | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-03-18 | — | — | US | disclosed |
| US-8601407-B2 | Geometric pattern data quality verification for maskless lithography | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-12-03 | — | — | US | disclosed |
| US-8473877-B2 | Striping methodology for maskless lithography | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 2013-06-25 | — | — | US | disclosed |
| US-8431291-B2 | Intensity selective exposure photomask | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-04-30 | — | — | US | disclosed |
| US-20130061187-A1 | STRIPING METHODOLOGY FOR MASKLESS LITHOGRAPHY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-03-07 | — | — | US | disclosed |
| US-20130055173-A1 | GEOMETRIC PATTERN DATA QUALITY VERIFICATION FOR MASKLESS LITHOGRAPHY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-02-28 | — | — | US | disclosed |
| US-8268541-B2 | Lithography apparatus; radiation source; masking enclosure and lens system | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2012-09-18 | — | — | US | disclosed |
| US-20090027643-A1 | COMPENSATION OF RETICLE FLATNESS ON FOCUS DEVIATION IN OPTICAL LITHOGRAPHY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2009-01-29 | — | — | US | disclosed |
| US-20080248403-A1 | METHOD AND SYSTEM FOR IMPROVING CRITICAL DIMENSION UNIFORMITY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2008-10-09 | — | — | US | disclosed |
| US-20080241714-A1 | METHOD AND APPARATUS FOR LENS CONTAMINATION CONTROL | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2008-10-02 | — | — | US | disclosed |
| US-20080241760-A1 | PEB EMBEDDED EXPOSURE APPARATUS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2008-10-02 | — | — | US | disclosed |
| US-20080206683-A1 | MASK AND BLANK STORAGE INNER GAS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2008-08-28 | — | — | US | disclosed |
| US-20070278424-A1 | METHOD AND APPARATUS TO IMPROVE LITHOGRAPHY THROUGHPUT | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2007-12-06 | — | — | US | disclosed |
| US-6218677-B1 | III-V nitride resonant tunneling | TEXAS INSTRUMENTS INCORPORATED | 2001-04-17 | — | — | US | disclosed |
| US-5723872-A | Mixed barrier resonant tunneling | TEXAS INSTRUMENTS INCORPORATED (US) | 1998-03-03 | — | — | US | disclosed |
| EP-0697741-A1 | Resonant tunneling devices | TEXAS INSTRUMENTS INCORPORATED (US) | 1996-02-21 | — | — | EP | disclosed |
| JP-S6261344-A | SINGLE-CRYSTAL FILM OF SILICON CALCIUM FLUORIDE MIXED CRYSTAL AND FORMING METHOD THEREOF | OKI ELECTRIC IND CO LTD | 1987-03-18 | — | — | JP | disclosed |