SCHEMBL2601704

SCHEMBL2601704

CCC(C)(C)C(=O)OC1CCC(OS(N)(=O)=O)CC1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 5/20 0.42
CA1 P00915 4/20 0.42
CA12 O43570 3/20 0.34
CA9 Q16790 3/20 0.34
MLNR O43193 1/20 0.31
CHRM2 P08172 1/20 0.31
CHRM1 P11229 1/20 0.31
CHRM3 P20309 1/20 0.31
HTR2A P28223 1/20 0.31
HTR2C P28335 1/20 0.31
HRH1 P35367 1/20 0.31
OPRM1 P35372 1/20 0.31
DRD3 P35462 1/20 0.31
OPRK1 P41145 1/20 0.31
HTR2B P41595 1/20 0.31
SLC6A3 Q01959 1/20 0.31
KCNH2 Q12809 1/20 0.31
CACNA1C Q13936 1/20 0.31
FKBP1A P62942 2/20 0.30
STS P08842 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2601720 0.88 CA1 (0.34) CA2CA1CA12CA9
SCHEMBL10224671 0.88 MLNR (0.31) MLNRCHRM2CHRM1CHRM3HTR2A
SCHEMBL17052466 0.86 MLNR (0.32) MLNRCHRM2CHRM1CHRM3HTR2A
SCHEMBL3434648 0.85 EPHX1 (0.37) MLNRCHRM2CHRM1CHRM3HTR2A
SCHEMBL2601706 0.82 CA1 (0.38) CA2CA1CA12CA9
SCHEMBL12202166 0.82 EPHX1 (0.34) CYP19A1
SCHEMBL12202178 0.82 EPHX1 (0.31) CHRM3
SCHEMBL9925209 0.80 ATM (0.44) MLNRCHRM2CHRM1CHRM3HTR2A
SCHEMBL13219576 0.79 EPHX1 (0.32)
SCHEMBL18119952 0.78 FKBP1A (0.34) MLNRCHRM2CHRM1CHRM3HTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-8987386-B2 Method of producing polymeric compound, resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-24 US disclosed
US-8735045-B2 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-05-27 US disclosed
US-8450044-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-28 US disclosed
US-8440385-B2 Positive resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-14 US disclosed
US-20120328993-A1 METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-27 US disclosed
US-20120100487-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-26 US disclosed
US-8034536-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-11 US disclosed
US-20110244392-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-06 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed
US-20110097667-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-28 US disclosed
US-20090297980-A1 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. 2009-12-03 US disclosed