SCHEMBL26248752

SCHEMBL26248752

Oc1ccc2c(O)c3c(O)cccc3cc2c1

nearest known ligand 0.64

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.64
ALDH1A1 P00352 2/20 0.64
KMT2A Q03164 2/20 0.64
DNMT1 P26358 1/20 0.64
CACNA1B Q00975 1/20 0.64
APBA1 Q02410 1/20 0.64
MCL1 Q07820 1/20 0.64
APOBEC3G Q9HC16 1/20 0.64
HSD17B1 P14061 3/20 0.44
HSD17B2 P37059 3/20 0.44
ESR1 P03372 2/20 0.44
ESR2 Q92731 2/20 0.44
CYP1A2 P05177 2/20 0.42
MAPT P10636 2/20 0.41
THRB P10828 2/20 0.41
HPGD P15428 2/20 0.41
ALOX15 P16050 2/20 0.41
SNCA P37840 2/20 0.41
RECQL P46063 2/20 0.41
HSD17B10 Q99714 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5598124 0.82 MEN1 (0.72) MEN1ALDH1A1KMT2ADNMT1CACNA1B
SCHEMBL30066036 0.82 MEN1 (0.72) MEN1ALDH1A1KMT2ADNMT1CACNA1B
SCHEMBL31035951 0.82 MEN1 (0.72) MEN1ALDH1A1KMT2ADNMT1CACNA1B
Methane SCHEMBL7938130 0.81 MEN1 (0.69) MEN1ALDH1A1KMT2ADNMT1CACNA1B
SCHEMBL3198 0.80 ALDH1A1 (1.00) MEN1ALDH1A1KMT2ADNMT1CACNA1B
Hydrochloric Acid SCHEMBL29701293 0.78 HSD17B1 (0.68) HSD17B1HSD17B2ESR1ESR2CYP1A2
SCHEMBL9350151 0.77 ESR2 (0.52) MEN1ALDH1A1KMT2ADNMT1CACNA1B
SCHEMBL14743755 0.76 CYP1A2 (0.54) MEN1ALDH1A1KMT2AHSD17B1HSD17B2
SCHEMBL15451 0.76 HSD17B1 (0.70) HSD17B1HSD17B2ESR1ESR2CYP1A2
SCHEMBL29738652 0.76 HSD17B1 (0.70) HSD17B1HSD17B2ESR1ESR2CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230296982-A1 POLYMER, COMPOSITION, METHOD FOR PRODUCING POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, RESIST COMPOSITION, RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING UNDERLAYER FILM FOR LITHOGRAPHY, CIRCUIT PATTERN FORMATION METHOD, AND COMPOSITION FOR OPTICAL MEMBER FORMATION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-09-21 US disclosed
US-20230296982-A1 POLYMER, COMPOSITION, METHOD FOR PRODUCING POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, RESIST COMPOSITION, RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING UNDERLAYER FILM FOR LITHOGRAPHY, CIRCUIT PATTERN FORMATION METHOD, AND COMPOSITION FOR OPTICAL MEMBER FORMATION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-09-21 US disclosed