⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL717733 | 1.00 | — | — | |
| SCHEMBL2671129 | 0.87 | — | — | |
| SCHEMBL31435088 | 0.82 | — | — | |
| SCHEMBL1792061 | 0.82 | — | — | |
| SCHEMBL952911 | 0.82 | — | — | |
| SCHEMBL49131 | 0.82 | — | — | |
| SCHEMBL6734791 | 0.82 | — | — | |
| SCHEMBL267646 | 0.82 | — | — | |
| SCHEMBL267645 | 0.82 | — | — | |
| SCHEMBL537202 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110504210-A | The manufacturing process of copper wiring technique | SHANGHAI HUALI INTEGRATED CIRCUIT MFG CO LTD | 2019-11-26 | — | — | CN | claimed |
| CN-107359115-A | The forming method of pad | 武汉新芯集成电路制造有限公司 | 2017-11-17 | — | — | CN | claimed |
| US-8344351-B2 | Phase change memory device with plated phase change material | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-01-01 | — | — | US | claimed |
| US-20120196442-A1 | CHEMICAL MECHANICAL POLISHING METHOD | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION (CN) | 2012-08-02 | — | — | US | claimed |
| CN-102615584-A | Chemical mechanical grinding method | SEMICONDUCTOR MFG INT SHANGHAI | 2012-08-01 | — | — | CN | claimed |
| US-20110240944-A1 | PHASE CHANGE MEMORY DEVICE WITH PLATED PHASE CHANGE MATERIAL | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-10-06 | — | — | US | claimed |
| US-8030130-B2 | Phase change memory device with plated phase change material | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-10-04 | — | — | US | claimed |
| US-20110037042-A1 | PHASE CHANGE MEMORY DEVICE WITH PLATED PHASE CHANGE MATERIAL | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-02-17 | — | — | US | claimed |
| US-20080225088-A1 | Fluid jet device and method for manufacturing the same | QISDA CORPORATION (TW) | 2008-09-18 | — | — | US | claimed |
| CN-1458689-A | Semiconductor device | HITACHI LTD (JP) | 2003-11-26 | — | — | CN | claimed |
| US-20030057861-A1 | Radiation shielding for field emitters | MICRON TECHNOLOGY, INC. | 2003-03-27 | — | — | US | claimed |
| US-6469436-B1 | Radiation shielding for field emitters | MICRON TECHNOLOGY, INC. | 2002-10-22 | — | — | US | claimed |
| US-20250338482-A1 | MEMORY DEVICE AND METHOD OF FORMING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2025-10-30 | — | — | US | disclosed |
| CN-117253896-A | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(北京)有限公司 | 2023-12-19 | — | — | CN | disclosed |
| US-20230352552-A1 | Memory, Gate-All-Around Field-Effect Transistor, and Manufacturing Method | HUAWEI TECHNOLOGIES CO., LTD. (CN) | 2023-11-02 | — | — | US | disclosed |
| EP-4261889-A1 | MEMORY, GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR, AND PRODUCING METHOD | Huawei Technologies Co., Ltd. (CN) | 2023-10-18 | — | — | EP | disclosed |
| WO-2001079584-A1 | METHODS FOR CHEMICAL VAPOR DEPOSITION OF TITANIUM-SILICON-NITROGEN FILMS | GELEST, INC. (US) | 2001-10-25 | — | — | WO | disclosed |
| EP-0146232-B1 | RESISTOR MATERIALS | FUJITSU LIMITED (JP) | 1988-06-08 | — | — | EP | disclosed |
| US-4609903-A | Thin film resistor for an integrated circuit semiconductor device | FUJITSU LIMITED (JP) | 1986-09-02 | — | — | US | disclosed |
| EP-0146232-A1 | Resistor materials | FUJITSU LIMITED (JP) | 1985-06-26 | — | — | EP | disclosed |