SCHEMBL2679092

SCHEMBL2679092

O=S(=O)(O)F.O=S(=O)(O)F.O=S(=O)([O-])F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
FAAH O00519 1/20 0.35
PRSS1 P07477 1/20 0.35
PRSS2 P07478 1/20 0.35
ELANE P08246 1/20 0.35
PRTN3 P24158 1/20 0.35
PRSS3 P35030 1/20 0.35
POLB P06746 2/20 0.35
CYP2D6 P10635 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
SNCA P37840 1/20 0.33
SRC P12931 1/20 0.32
HTR6 P50406 1/20 0.32
PTGS2 P35354 1/20 0.32
CA2 P00918 3/20 0.31
CA12 O43570 2/20 0.31
CA9 Q16790 2/20 0.31
ALDH1A1 P00352 1/20 0.31
APOBEC3G Q9HC16 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2435600 1.00 TSHR (0.39) TSHRSMN1; SMN2FAAHPRSS1PRSS2
SCHEMBL1476157 0.93 FAAH (0.39) TSHRSMN1; SMN2FAAHPRSS1PRSS2
SCHEMBL7914149 0.93 FAAH (0.39) TSHRSMN1; SMN2FAAHPRSS1PRSS2
SCHEMBL561475 0.93 FAAH (0.39) TSHRSMN1; SMN2FAAHPRSS1PRSS2
SCHEMBL5078707 0.93 FAAH (0.39) TSHRSMN1; SMN2FAAHPRSS1PRSS2
SCHEMBL2283421 0.93 FAAH (0.39) TSHRSMN1; SMN2FAAHPRSS1PRSS2
SCHEMBL7102917 0.93 FAAH (0.39) TSHRSMN1; SMN2FAAHPRSS1PRSS2
SCHEMBL7038440 0.89 CA12 (0.39) TSHRSMN1; SMN2CYP2D6TDP1CA2
Sulfuric Acid SCHEMBL5798237 0.89 TSHR (0.44) TSHRSMN1; SMN2POLBCYP2D6TDP1
SCHEMBL1477345 0.85 ALDH1A1 (0.40) TDP1CA2ALDH1A1CA1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5981146-A CONTAINING A COMPOUND HAVING A SULFONIC ACID GROUP OR A CARBONIC ACID GROUP IS FORMED ON A CHEMICAL-AMPLIFICATION-TYPE RESIST FILM OF A SEMICONDUCTTOR SUBSTRATE, FOLLOWED BY PERFORMING EXPOSURE MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1999-11-09 US claimed
EP-0568496-B1 Photoresist materials based on polystyrene OLIN MICROELECTRONIC CHEM INC (US) 1998-12-30 EP claimed
EP-0568496-A2 Photoresist materials based on polystyrene OCG Microelectronic Materials Inc. (US) 1993-11-03 EP claimed
US-5100762-A Radiation-sensitive polymer and radiation-sensitive composition containing the same MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1992-03-31 US claimed
CN-114901468-B Laminate, method for producing same, and exterior material for automobile 三菱化学株式会社 2024-04-30 CN disclosed
WO-2024045679-A1 ZN-BASED ORGANIC COORDINATION NANOPARTICLES AND PREPARATION METHOD THEREFOR, PHOTORESIST COMPOSITION, AND USE THEREOF 清华大学 2024-03-07 WO disclosed
WO-2024046107-A1 ZN-BASED ORGANICALLY-COORDINATED NANOPARTICLES, PHOTORESIST COMPOSITION, PREPARATION METHOD THEREFOR, AND USE THEREOF 清华大学 2024-03-07 WO disclosed
WO-2024046108-A1 ZN-BASED ORGANIC COORDINATION NANOPARTICLE AND PREPARATION METHOD THEREFOR, PHOTORESIST COMPOSITION CONTAINING SAME, AND USE THEREOF 清华大学 2024-03-07 WO disclosed
US-20230154750-A1 Photoresist and Method TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-05-18 US disclosed
CN-115960483-A Method for reducing shrinkage stress of photocureable coating by using pH-responsive cationic microgel 江南大学 2023-04-14 CN disclosed
US-20220298397-A1 LAMINATE, PRODUCTION METHOD THEREFOR, AND AUTOMOTIVE EXTERIOR MATERIAL MITSUBISHI CHEMICAL CORPORATION (JP) 2022-09-22 US disclosed
WO-2021132148-A1 LAMINATED BODY AND PRODUCTION METHOD THEREFOR, AND AUTOMOTIVE EXTERIOR MATERIAL 三菱ケミカル株式会社 2021-07-01 WO disclosed
US-5776657-A Wet-chemical developable, etch-stable photoresist for UV radiation with a wavelength below 200 NM OCG MICROELECTRONIC MATERIALS, INC. (US) 1998-07-07 US disclosed
US-5633112-A Photosensitive resin composition containing a carboxylic acid polymer, photoacid generator and secondary or tertiary aliphatic amine HITACHI, LTD. (JP) 1997-05-27 US disclosed
EP-0737897-A1 Wet developable etch resistant photoresist for UV-exposure at wavelength below 200 nm OCG Microelectronic Materials Inc. (US) 1996-10-16 EP disclosed
US-5565304-A ALKALI SOLUBLE BINDER RESIN FROM HYDROXYSTYRENEAND METHYLOLATED PHENOLIC COMPOUND OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-10-15 US disclosed
US-5550004-A RESIN BINDER HAVING HYDROXYSTYRENE AND MONOMETHYLOLATED PHENOLIC COMPOUNDS OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-08-27 US disclosed
EP-0727711-A2 Photoresist compositions containing supercritical fluid fractionated polymeric binder resins OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-08-21 EP disclosed
EP-0697632-A2 Chemically amplified radiation-sensitive composition OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-02-21 EP disclosed
US-5100762-A Radiation-sensitive polymer and radiation-sensitive composition containing the same MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1992-03-31 US disclosed