SCHEMBL26816342

SCHEMBL26816342

CC(C)C(OC(=O)c1cc(I)cc(I)c1I)C(F)(F)S(=O)(=O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26059444 0.88 SOS1 (0.32)
SCHEMBL26938024 0.83 CA12 (0.30)
SCHEMBL22454822 0.83 GABRA1 (0.33)
SCHEMBL23059985 0.82 SOS1 (0.31)
SCHEMBL26064956 0.80
SCHEMBL26059873 0.79
SCHEMBL19756001 0.79 KDM4E (0.31)
SCHEMBL23559349 0.77 ALDH1A1 (0.32)
SCHEMBL25739037 0.77 GABRA1 (0.36)
SCHEMBL23383201 0.77 TTR (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024142681-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2024-07-04 WO disclosed
US-20230400768-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed