Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRA1 | P14867 | 1/20 | 0.33 |
| ▸ | GABRG2 | P18507 | 1/20 | 0.33 |
| ▸ | GABRB3 | P28472 | 1/20 | 0.33 |
| ▸ | GABRA5 | P31644 | 1/20 | 0.33 |
| ▸ | GABRA3 | P34903 | 1/20 | 0.33 |
| ▸ | GABRA2 | P47869 | 1/20 | 0.33 |
| ▸ | GABRA4 | P48169 | 1/20 | 0.33 |
| ▸ | GABRA6 | Q16445 | 1/20 | 0.33 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.30 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.30 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.30 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.30 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.30 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.30 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.30 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.30 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.30 |
| ▸ | HDAC9 | Q9UKV0 | 1/20 | 0.30 |
| ▸ | HDAC5 | Q9UQL6 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL24776315 | 0.88 | TTR (0.33) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL26059444 | 0.86 | SOS1 (0.32) | HDAC3HDAC4HDAC1HDAC7HDAC2 | |
| SCHEMBL22454821 | 0.85 | GABRA1 (0.35) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL26816342 | 0.83 | — | — | |
| SCHEMBL20691772 | 0.83 | HDAC3 (0.33) | HDAC3HDAC4HDAC1HDAC7HDAC2 | |
| SCHEMBL25985160 | 0.83 | POLB (0.41) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL20896991 | 0.82 | HDAC3 (0.33) | HDAC3HDAC4HDAC1HDAC7HDAC2 | |
| SCHEMBL25985172 | 0.81 | — | — | |
| SCHEMBL27277335 | 0.80 | GABRA1 (0.32) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL24776320 | 0.80 | GABRA1 (0.36) | GABRA1GABRG2GABRB3GABRA5GABRA3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367210-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230359119-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-09 | — | — | US | disclosed |
| US-20230350296-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230324798-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-12 | — | — | US | disclosed |
| US-20230288800-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-14 | — | — | US | disclosed |
| US-20230259027-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-17 | — | — | US | disclosed |
| US-20230132653-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230132653-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230139009-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| WO-2022265034-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING COMPOUNDS, INTERMEDIATE, AND COMPOUNDS | 東京応化工業株式会社 | 2022-12-22 | — | — | WO | disclosed |
| US-20210395195-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-12-23 | — | — | US | disclosed |
| US-20200301275-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-09-24 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20210395195-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS | RCC1, RER1, NAF1 | GABRA1 2231/4885GABRG2 3100/4885GABRB3 3438/4885 |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | INSR, INSRR, SLC6A5 | GABRA1 821/4885GABRG2 1278/4885GABRB3 1123/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.