SCHEMBL2681827

SCHEMBL2681827

CCCOC(=O)C1CC2CC1C(C)C2C

nearest known ligand 0.36

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
PPM1B O75688 1/20 0.36
PTPN1 P18031 1/20 0.36
PPP1CC P36873 1/20 0.36
ALDH1A1 P00352 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.30
HCAR2 Q8TDS4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12237643 0.91 EPHX2 (0.31) PPM1BPTPN1PPP1CC
SCHEMBL2680868 0.90 ALDH1A1 (0.39) ALDH1A1L3MBTL1HCAR2
SCHEMBL2680861 0.89 NAAA (0.39) ALDH1A1HCAR2
SCHEMBL2681343 0.88 NAAA (0.41) ALDH1A1NPSR1HCAR2
SCHEMBL2681400 0.88 NAAA (0.41) ALDH1A1NPSR1HCAR2
SCHEMBL11927949 0.87
SCHEMBL12271258 0.86 CA1 (0.35) PPM1BPTPN1PPP1CCALDH1A1
SCHEMBL12429888 0.86 ALDH1A1 (0.41) ALDH1A1
SCHEMBL12430243 0.85 TSHR (0.31)
SCHEMBL12270891 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220151066-A1 RESIN MULTILAYER SUBSTRATE AND METHOD FOR MANUFACTURING RESIN MULTILAYER SUBSTRATE MURATA MANUFACTURING CO., LTD. (JP) 2022-05-12 US disclosed
US-8734904-B2 Methods of forming topographical features using segregating polymer mixtures INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-05-27 US disclosed
EP-2296039-B1 Positive photosensitive composition FUJIFILM CORP (JP) 2013-09-25 EP disclosed
US-8450406-B2 Organic-inorganic hybrid material and its shaped article, optical component and lens FUJIFILM CORPORATION (JP) 2013-05-28 US disclosed
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-20120135146-A1 METHODS OF FORMING TOPOGRAPHICAL FEATURES USING SEGREGATING POLYMER MIXTURES JSR CORPORATION (JP) 2012-05-31 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed