SCHEMBL2680868

SCHEMBL2680868

CCCCOC(=O)C1CC2CC1C(C)C2C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.39
ATM Q13315 1/20 0.37
TSHR P16473 3/20 0.35
HPGD P15428 1/20 0.35
CHRM2 P08172 1/20 0.34
CHRM4 P08173 1/20 0.34
CHRM5 P08912 1/20 0.34
CHRM1 P11229 1/20 0.34
CHRM3 P20309 1/20 0.34
HCAR2 Q8TDS4 1/20 0.33
SMN1; SMN2 Q16637 3/20 0.33
L3MBTL1 Q9Y468 2/20 0.33
LMNA P02545 2/20 0.33
POLB P06746 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
NAAA Q02083 1/20 0.33
RAB9A P51151 1/20 0.32
MAPK1 P28482 2/20 0.32
KDM4E B2RXH2 1/20 0.32
ESR1 P03372 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2680861 0.95 NAAA (0.39) ALDH1A1TSHRCHRM2CHRM4CHRM5
SCHEMBL2681343 0.94 NAAA (0.41) ALDH1A1TSHRCHRM2CHRM4CHRM5
SCHEMBL2681400 0.94 NAAA (0.41) ALDH1A1TSHRCHRM2CHRM4CHRM5
SCHEMBL2681827 0.90 PPM1B (0.36) ALDH1A1HCAR2L3MBTL1
SCHEMBL13319477 0.88
SCHEMBL13319480 0.86 ACHE (0.33)
SCHEMBL13790753 0.85 ALDH1A1 (0.35) ALDH1A1ATMTSHRHPGDCHRM2
SCHEMBL12237643 0.85 EPHX2 (0.31)
SCHEMBL11927949 0.84
SCHEMBL12271258 0.83 CA1 (0.35) ALDH1A1SMN1; SMN2RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-7622242-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-24 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-20090198037-A1 NORBORNENE-BASED POLYMER, FILM CONTAINING THE SAME, POLARIZING PLATE, AND LIQUID CRYSTAL DISPLAY DEVICE FUJIFILM CORPORATION (JP) 2009-08-06 US disclosed
US-7550546-B2 Norbornene-based polymers, films, polarizing plates and liquid crystal display devices FUJIFILM CORPORATION (JP) 2009-06-23 US disclosed
US-20090081588-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20080033133-A1 NORBORNENE-BASED POLYMERS, FILMS, POLARIZING PLATES AND LIQUID CRYSTAL DISPLAY DEVICES FUJIFILM CORPORATION (JP) 2008-02-07 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed