SCHEMBL2681883

SCHEMBL2681883

CC1C2CC(C(=O)OC3CC4CCC3C4)C(C2)C1C

nearest known ligand 0.45

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ATM Q13315 1/20 0.43
CYP19A1 P11511 1/20 0.37
GRM1 Q13255 6/20 0.36
POLB P06746 1/20 0.31
PDE4A P27815 3/20 0.30
PDE4B Q07343 3/20 0.30
PDE4C Q08493 3/20 0.30
PDE4D Q08499 3/20 0.30
SLC6A3 Q01959 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12228753 0.77 ATM (0.53) ATMCYP19A1GRM1POLB
SCHEMBL12429872 0.77 EPHX1 (0.40)
SCHEMBL2681397 0.76 EPHX1 (0.35)
SCHEMBL2681392 0.75 EPHX1 (0.38) CYP19A1
SCHEMBL13714657 0.72 CHRNB2 (0.37)
SCHEMBL2680879 0.72 CHRNB2 (0.37)
SCHEMBL14509996 0.72 CHRNB2 (0.37)
SCHEMBL2681393 0.71
SCHEMBL26839834 0.70 HSD11B1 (0.37)
SCHEMBL15219695 0.70 ATM (0.56) ATMCYP19A1GRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed