Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LDHA | P00338 | 1/20 | 0.38 |
| ▸ | PSD | A5PKW4 | 1/20 | 0.36 |
| ▸ | EP300 | Q09472 | 2/20 | 0.35 |
| ▸ | KAT2B | Q92831 | 2/20 | 0.35 |
| ▸ | KAT8 | Q9H7Z6 | 2/20 | 0.35 |
| ▸ | CA1 | P00915 | 9/20 | 0.35 |
| ▸ | CA2 | P00918 | 9/20 | 0.35 |
| ▸ | IDO1 | P14902 | 2/20 | 0.33 |
| ▸ | GAA | P10253 | 2/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | MITF | O75030 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | TP53 | P04637 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | THRB | P10828 | 1/20 | 0.32 |
| ▸ | HPGD | P15428 | 1/20 | 0.32 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.32 |
| ▸ | CASP1 | P29466 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3120012 | 0.99 | LDHA (0.37) | LDHAPSDEP300KAT2BKAT8 | |
| SCHEMBL1593672 | 0.96 | LDHA (0.39) | LDHAPSDEP300KAT2BKAT8 | |
| SCHEMBL3122221 | 0.86 | PSD (0.34) | LDHAPSDEP300KAT2BKAT8 | |
| SCHEMBL30316829 | 0.86 | CA1 (0.34) | CA1CA2 | |
| SCHEMBL5698053 | 0.86 | CA1 (0.34) | CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL36124 | 0.86 | LDHA (0.44) | LDHAPSDEP300KAT2BKAT8 | |
| Trifluoromethanesulfonic Acid SCHEMBL31168271 | 0.86 | LDHA (0.44) | LDHAPSDEP300KAT2BKAT8 | |
| SCHEMBL3120425 | 0.86 | CYP1A2 (0.34) | CA1CA2 | |
| SCHEMBL3117405 | 0.85 | CA1 (0.34) | LDHAPSDEP300KAT2BKAT8 | |
| SCHEMBL3122212 | 0.85 | CYP1A2 (0.33) | CA1CA2MMP1MMP2MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9176381-B2 | Positive type photosensitive resin composition | CHEIL INDUSTRIES INC. (KR) | 2015-11-03 | — | — | US | disclosed |
| US-8722306-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-05-13 | — | — | US | disclosed |
| US-8133653-B2 | Positive resist composition for forming thick-film resist, thick-film resist laminate, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-13 | — | — | US | disclosed |
| US-20110159428-A1 | Positive Type Photosensitive Resin Composition | CHEIL INDUSTRIES INC. (KR) | 2011-06-30 | — | — | US | disclosed |
| US-20110091818-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-04-21 | — | — | US | disclosed |
| US-20100279226-A1 | RESIST PROCESSING METHOD | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-11-04 | — | — | US | disclosed |
| US-20100273113-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-10-28 | — | — | US | disclosed |
| US-20100273112-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-10-28 | — | — | US | disclosed |
| US-20100178608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-07-15 | — | — | US | disclosed |
| US-7638266-B2 | Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-12-29 | — | — | US | disclosed |
| US-20030203309-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030191268-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition | IWASAWA HARUO (JP) | 2003-10-09 | — | — | US | disclosed |
| US-20030073040-A1 | Pattern forming method and bilayer film | JSR CORPORATION (JP) | 2003-04-17 | — | — | US | disclosed |
| US-6531260-B2 | Photoresist | JSR CORPORATION (JP) | 2003-03-11 | — | — | US | disclosed |
| US-6482568-B1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-11-19 | — | — | US | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| EP-1193558-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |