SCHEMBL2734976

SCHEMBL2734976

CCC(C)(C)C(=O)OCC(=O)OC1CCCCO1

nearest known ligand 0.36

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 3/20 0.36
FKBP1A P62942 6/20 0.33
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
LMNA P02545 1/20 0.31
POLB P06746 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15697292 0.96 LMNA (0.34) HMGCRFKBP1ALMNAPOLB
SCHEMBL13016355 0.86 HMGCR (0.31) HMGCR
SCHEMBL15697295 0.86 MEN1 (0.30) MEN1KMT2A
SCHEMBL785892 0.85 FKBP1A (0.37) HMGCRFKBP1AMEN1KMT2A
SCHEMBL12263816 0.84 HMGCR (0.35) HMGCRFKBP1AMEN1KMT2ALMNA
SCHEMBL15697293 0.84
SCHEMBL13016339 0.84 HMGCR (0.31) HMGCR
SCHEMBL13016347 0.83
SCHEMBL15697294 0.82 LMNA (0.33) LMNAPOLB
SCHEMBL17424231 0.82 MEN1 (0.36) HMGCRFKBP1AMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180087010-A1 PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-03-29 US disclosed
US-9746771-B2 Laminate body FUJIFILM CORPORATION (JP) 2017-08-29 US disclosed
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20160170303-A1 LAMINATE BODY FUJIFILM CORPORATION (JP) 2016-06-16 US disclosed
US-9310682-B2 Positive-type resist composition CENTRAL GLASS COMPANY, LIMITED (JP) 2016-04-12 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-20150197663-A1 SELF-ORGANIZING COMPOSITION FOR FORMING PATTERN, METHOD FOR FORMING PATTERN BY SELF-ORGANIZATION OF BLOCK COPOLYMER USING SAME, AND PATTERN FUJIFILM CORPORATION (JP) 2015-07-16 US disclosed
US-20150086912-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-03-26 US disclosed
US-20140134542-A1 Positive-Type Resist Composition CENTRAL GLASS COMPANY, LIMITED (JP) 2014-05-15 US disclosed
US-8088550-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2012-01-03 US disclosed
US-20090035692-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20090023096-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-22 US disclosed